Insulators with energy band gap of 9 eV and 8 eV respectively CdF2 shallow donor states with 0.1 eV activation energy and free electron concentration up to 1019cm-3 3 eV conduction band offset at CdF2/ MnF2 interface Antiferromagnetic ordering in MnF2 below 67.3 K MnF2 tetragonal rutile-type phase (a=4.87A,c=3.31A) and several other phases at high pressure and temperatures CdF2 cubic fluorite-type phase (a=5.39A) Relatively small lattice mismatch (2.2%) for MnF2 and CdF2 cubic fluorite-type phases The same signs of mismatch and lattice parameters close to Si for MnF2 and CdF2 fluorite-type phases (D a/a) MnF2 = - 3.0%, (D a/a) CdF2 = - 0.8%

 
 
 
 

Fig. 1  Rutile MnF2crystal structure (above). Below  is the crystal structure of the orthorhombic a-PbO2 structure that stabilises in epitaxial growth on <111> Si substrates.

Fig. 2 Unit cell of rutile MnF2 (above)

 
 

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