MBE-growth and studies
   of MnF2 films on Si(111) and Si(001).
Motivation and methods
Main properties of MnF2 and CdF2 crystals
MBE growth of MnF2-CdF2 epitaxial layers
RHEED monitoring of SL growth
Double crystal X-ray diffractometry 
Photoluminescence of annealed MnF2/Si(111) structures
High Temperature Growth MnF2/Si(111)
AFM & RHEED images of annealed MnF2/CaF2/Si(111)
AFM & RHEED images of MnF2 layers on CaF2/Si(001)
Superlattice surface morphology
Summary

Motivation:
 


Experimental methods:
 

MBE - molecular beam epitaxy
RHEED - reflection high energy
                    electron diffraction
AFM - atomic force microscopy
XRD - X-ray diffractometry
PL - photoluminescence

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Contact person: Nikolai S.Sokolov Tel.: +7 (812) 247-6411 Fax: +7 (812) 247-8640;
e-mail: nsokolov@fl.ioffe.rssi.ru;
Postal address:Postal address: 26 Polytekhnicheskaya, St. Petersburg 194021, Russian Federation N.S.Sokolov

Web master: MarinaMoisseeva
e-mail: marina@fl.ioffe.rssi.ru;
 

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