Publications (since 2007):

  1. Закгейм А.Л., Левинштейн М.Е., Петров П.В., Черняков А.Е., Шабунина Е.И., Шмидт Н.М. " Низкочастотный шум в исходных и деградировавших синих InGaN/GaN светодиодах" ФТП, 46 (2), 219-223 (2012)

  2. S L Rumyantsev, M E Levinshtein, M S Shur, T. Saxena, Q J Zhang, A K Agarwal, J W Palmour, "Optical triggering of 12 kV, 100 A 4H-SiC thyristors" Semicond. Sci. Technol. 27 015012 (4pp) (2012)

  3. Т.Т. Мнацаканов, М.Е. Левинштейн, А.Г. Тандоев, С.Н. Юрков "Модуляционные волны носителей заряда в полупроводниковых слоях n- и p-типа" ФТП, 45 (2), стр 196-201 (2011)
    T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, and S. N. Yurkov "Modulation Waves of Charge Carriers in n- and p-_Type Semiconductor Layers", Semiconductors, 45, No. 2, 192–197. (2011)

  4. Tigran T. Mnatsakanov, Alexey G. Tandoev, Michael E. Levinshtein, Sergey N. Yurkov "Physical limitations of the diffusive approximation in semiconductor device modeling" Solid-State Electronics 56, 60-67 (2011)

  5. Левинштейн М.Е., Иванов П.А., Palmour J.W., Agarwal A.K., Das M.K. "Особенности деградации высоковольтных 4H-SiC p-i-n диодов под действием импульсов прямого тока." Письма в ЖТФ, 37, (8), стр. 7-12 (2011)
    Levinshtein M E, Ivanov A. M., Palmour J.W., Agarwal A.K., Das M.K "Features of Degradation in High_Voltage 4H_SiC p–i–n Diodes under the Action of Forward Current Pulses" Technical Physics Letters, 37, (4), 3472-349 (2011)

  6. M. E. Levinshtein, T T Mnatsakanov, A. K. Agarwal, J.W. Palmour "Analytical and Numerical Studies of p+-Emitters to Silicon Carbide Bipolar Devices" Semicond. Sci. Techn. 26 055024 (8pp) (2011)

  7. V. B. Shuman, T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, S. N. Yurkov, and J. W. Palmour "Experimental verification of a new approach to analysis of the quasineutral carrier transport in semiconductors and semiconductor structures" Semocond. Sci. Techn. 26, 085016 (7pp) (2011)

  8. S L Rumyantsev, M S Shur, M E Levinshtein, P A Ivanov, J W Palmour, A K Agarwal, S. Dhar
    "Si-like low-frequency noise characteristics of 4H-SiC MOSFETs" Semocond. Sci. Techn. 26, 085015 (5pp) (2011)

  9. Иванов А. М., Левинштейн М.Е., Palmour J.W., Agarwal A.K., Das M.K. " Активация донорного центра в высоковольтных 4H-SiC p-i-n диодах под действием прямого тока. Письма в ЖТФ, 37, (19), стр.45-50 (2011)
    Ivanov A. M., Levinshtein M E, Palmour J.W., Agarwal A.K., Das M.K " Forward Current Generated Donor Centers in High_Voltage 4H_SiC Based p–i–n Diodes" Technical Physics Letters, 37, (10), 911–913 (2011)

  10. P.A. Ivanov, M.E. Levinshtein, J.W. Palmour, A.K. Agarwal, J. Zhang "Fast turn-off of high voltage 4H–SiC npn BJTs from saturation on-state regime", Semicond. Sci. Technol. (3 pages) 25, 045030 (2010)

  11. S.L. Rumyantsev, M.E. Levinshtein, M.S. Shur, J.W. Palmour, A.K. Agarwal, M.K. Das "Effect of forward current stress on low frequency noise in 4H–SiC p-n junctions", J. Appl. Phys. (5 pages) 108, 024508 (2010)

  12. T. T. Mnatsakanov, A. G. Tandoev, S. N. Yurkov, M. E. Levinshtein "Non-conventional quasineutral mode of carrier transport in semiconductors and semiconductor structures", J. Appl. Phys. 105, 044506 (2009)

  13. T. T. Mnatsakanov, A. G. Tandoev, S. N. Yurkov, M. E. Levinshtein "Specific features of quasineutral modes of carrier transport in semiconductors and semiconductor structures", Semicond. Sci. Technol. (8 pages) 24, 075006 (2009)

  14. S L Rumyantsev, M S Shur, M E Levinshtein, P A Ivanov, J W Palmour, A K Agarwal, B A Hull and Sei-Hyung Ryu "Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures", Semicond. Sci. Technol. (6 pages) 24, 075011 (2009)

  15. N. S. Averkiev, M. E. Levinshtein, P. V. Petrov, A. E. Chernyakov, E. I. Shabunina and N. M. Shmidt "Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current", Semiconductors 35, (10) pp. 922-924 (2009)

  16. A. P. Dmitriev, M. E. Levinshtein, and S. L. Rumyantsev "On the Hooge relation in semiconductors and metals", J. Appl. Phys. (5 pages) 106, 024514 (2009)

  17. T T Mnatsakanov, M E Levinshtein, L I Pomortseva1 and J W Palmour "Fundamental physical limitations on the blocking voltage of SiC rectifier diodes", Semicond. Sci. Technol. (6 pages) 24, 125010 (2009)

  18. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, A. Motayed, and A. V. Davydov "Low-frequency noise in GaN nanowire transistors", J. Appl. Phys. 103, 064501 (2008)

  19. M E Levinshtein, T T Mnatsakanov, P A Ivanov, J W Palmour, M K Das, and B A Hull "Self-Heating and Loss of Thermal Stability under a Single Current Surge Pulse in High Voltage 4H-SiC Rectifier Diodes", Sem. Sci. Techn. v. 23, N8, 085011 (2008)

  20. M. E. Levinshtein, P. A. Ivanov, T. T. Mnatsakanov, John W. Palmour, Mrinal K. Das, Brett A. Hull "Self-heating and destruction of high voltage 4H-SiC rectifier diodes under a single short current surge pulse", Solid-State Electronics v 52, 1802–1805 (2008)

  21. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, M. K. Das, and B. A. Hull "Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors"  J. Appl. Phys. 104, 094505 (2008)

  22. A P Dmitriev, M E Levinshtein, E N Kolesnikova, J W Palmour, M K Das, and B A Hull "A model of the 1/f noise in a forward-biased  p-n diode" Sem. Sci. Techn. v. 23, N1, 015011 (2008)

  23. T. T. Mnatsakanov, M. E. Levinshtein, and A. S. Freidlin " Effect of Auger Recombination on the Thermal Stability of High-Voltage High-Power Semiconductor Diodes Semiconductors, v. 42, (2) pp. 220-227 (2008)

  24. M E Levinshtein, T T Mnatsakanov, P A Ivanov, J W Palmour, M K Das, and B A Hull "Isothermal Current-Voltage Characteristics of High Voltage Silicon Carbide Rectifier P-I-N Diodes at Very High Current Densities" Semicond. Sci. Technol., v. 22 (3), 253-258 (2007)

  25. P. A. Ivanov, M. E. Levinshtein, J. W. Palmour, A. K. Agarwal,  and S. Krishnaswami "Current Gain of 4H-SiC High Voltage BJTs at Reduced Temperatures" Semicond. Sci. Technol., v. 22 (6), 613-615 (2007)

  26. Michael E. Levinshtein, Tigran T. Mnatsakanov, Pavel A. Ivanov,  John W. Palmour, Mrinal K. Das and Brett A. Hull Steady state self-heating and dc current–voltage characteristics of  high-voltage 4H-SiC p+–n–n+ rectifier diodes Solid-State Electronics v. 51, (6) 955-960, (2007)

  27. Mnatsakanov, T.; Levinshtein, M.; Tandoev, A.; Yurkov  "Specific features of dynamic injection and base layer modulation  processes in power n+-p-p+diodes"  Semiconductors, Vol. 41 Issue 11, p1381-1387, (2007)

  28. M. E. Levinshtein, S. L. Rumyantsev, R. Tauk, S. Boubanga, N.  Dyakonova, W. Knap, A. Shchepetov, S. Bollaert, Y. Rollens, and M. S. Shur "Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length"  J. Appl. Phys. 102, 064506 (2007)

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