Conference Presentations (since 2007):

  1. E.И. Шабунина, Н.M. Шмидт, A.E. Черняков, П.В. Петров, M.E. Левинштейн, Н.С. Аверкиев, "Низкочастотный шум в подвергнутых деградации InGaN/GaN синих светодиодах" Тезисы докладов 8-ой Всероссийской конференции "Нитриды галлия, индия и алюминия – структуры и приборы", 26-18 мая 2011, Ст. Петербург, стр 105-106

  2. Н.M. Шмидт, Н.С. Аверкиев, Д. А. Бауман, А. Л. Закгейм, M.E. Левинштейн, П.В. Петров, A.E. Черняков, E.И. Шабунина, "Причины неоднозначного развития деградационного процесса в синих InGaN/GaN светодиодах", Тезисы докладов 8-ой Всероссийской конференции "Нитриды галлия, индия и алюминия – структуры и приборы", 26-18 мая 2011, Ст. Петербург, стр 109-110

  3. S. L. Rumyantsev, M. E. Levinshtein, M S Shur, J. W. Palmour, A. K. Agarwal, and M K Das, "Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions" Proceedings of 21-th International Conference on Noise and Fluctiations, ICNF-2011, June 12-16, 2011, Toronto, Canada, pp 104-105

  4. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, .J. W. Palmour, A. K. Agarwal, and S. Dhar "4H-SiC MOSFETs with Si-like low-frequency noise characteristics" Proceedings of Intern. Conference on Silicon Carbide and Related Materials ICSCRM 2011, September 11 – 16, 2011, Cleveland, Ohio, USA

  5. P. Ivanov, Michael Levinshtein, John Palmour, Anant Agarwal, Jon Zhang, "Fast switch-off of high voltage 4H–SiC npn BJTs from deep saturation mode", Intern. Conference on Silicon Carbide and Related Materials ICSCRM 2009, Nurnberg, 11-6th October 2009; Material Sci. Forum v 645-648, 1049-1052 (2010) 

  6. S L Rumyantsev, M E Levinshtein, M S Shur, J W Palmour, A K Agarwal, and M K Das, "Low Frequency Noise and Degradation Processes in 4H-SiC p-n junctions", The 8th European Conference on Silicon Carbide and Related Materials Oslo, Norway. August 29 – September 2, 2010, Technical Digest 

  7. M. E. Levinshtein, S. L. Rumyantsev, "The 1/f noise: burial is abolished (or postponed)" (invited), 2009 Advanced Research Workshop Future trends in microelectronics: Unmapped Roads, Sardinia, Italy, June 14-19 (2009) 

  8. S. L. Rumyantsev, M. E. Levinshtein, P. A. Ivanov, M. S. Shur, J. W. Palmour, A. K. Agarwal, B. A. Hull, S. H. Ryu, "Noise and Interface Density of Traps in 4H-SiC MOSFETs", 20th International Conference on Noise and Fluctuations, ICNF 2009, June 14th-19th, 2009 Pisa, Italy, AIP Conf. Proceedings, 1129, p.341 

  9. S. L. Rumyantsev, M. S. Shur, A. V. Davydov, M.. E. Levinshtein, "Low frequency noise in nano-objects", Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators, Advanced Research Workshop, June 29-July 02, St. Petersburg, Russia (oral) 

  10. N.S. Averkiev, A.E. Chernyakov, M.E. Levinshtein, P.V. Petrov, E.I. Shabunina, N.M. Shmidt, E.B. Yakimov, "Two channels of non-radiative recombination in InGaN/GaN LEDs", 25-th Intern. Conf. on Defects in Semiconductors. St. Petersburg, Russia, July 20-24, 2009.Abstracts, pp. 413-414 

  11. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, A. Motayed, and A. V. Davydov, "Electrical and noise characteristics of GAN Nanowire Transistors", 6th All-Russian Conference Gallium, Aluminum and Indium Nitrides, June 18 - 20, 2008, St Petersburg, Russia, Abstracts, pp. 144-145 

  12. Pavel Ivanov, Michael Levinshtein, John Palmour, Mrinal Das, Brett Hull, Michael Shur, Sergey Rumyantsev "Low frequency noise in 4H-SiC MOSFETs", Abstracts of European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Barcelona, 7-11th September 2008 

  13. Dyakonova N., Coquillat D., Teppe F., Knap W., Levinshtein M. E., Rumyantsev S. L., Poisson M.-A., Delage S., Gaquiere C., Vandenbrouk S., Cappy A. "THz emission from AlGaN/GaN high mobility transistors", Пятая Международная Конференция  «Фундаментальные проблемы оптики» «ФПО – 2008» Санкт – Петербург, Россия, 20 октября – 24 октября 2008 г (постер)

  14. Е. И. Шабунина, Н. С. Аверкиев, А. Ю. Кислякова, М. Е. Левинштейн, П. В. Петров, А. Е. Черняков, Н. М. Шмидт "Низкочастотный шум светодиодов на основе квантоворазмерных структур InGaN/GaN" Международный семинар по опто- и наноэлектронике, Санкт – Петербург, Россия, 27 октября 2008 года (постер)

  15. S. L. Rumyantsev, A. Dmitriev, M. Levinshtein, D. Veksler, M. S. Shur, J. Palmour, M. Das, B. Hull, "Generation-recombination noise in forward-biased 4H-SiC p-n diode, " Fourth SPIE International Symposium on Fluctuations and Noise, 20-24 May 2007, Florence, Italy, Proc. of SPIE Vol. 6600 66001J-1

  16. M. E. Levinshtein, Tigran T Mnatsakanov, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das, and Brett A. Hull :" Self-heating of 4H-SiC PiN diodes at High Current Densities". International Conference on Silicon Carbide and Related Materials 2007 October 14-19, 2007 Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu, Japan

  17. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, A. Motayed, and A. V. Davydov, "1/f noise and its suppression in GaN nanowire transistors," Workshop On Frontiers in Electronics WOFE-07, December 15-19 (2007), Cozumel,  Quintana Roo 77600, Mexico

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