Division
of Physics of Semiconductor Heterostructures
- physics and technology (LPE, MBE, MOCVD) of silicon and III-V semiconductors, semiconductor heterostructures
- characterization of materials and structures (transmission and scanning electron microscopy, electron probe, X-ray diffraction, Auger electron spectroscopy, DLTS)
- optoelectronics, nanoelectronics (low-dimensional heterostructures)
- solid state theory
- amorphous semiconductors
- ultrafast processes and nonlinear optical phenomena
- semiconductor laser diodes (CW, DFB, and picosecond heterostructure lasers), photodetectors and solar cells, power semiconductor devices
Staff: 234 researchers, including 28 Doctors and 110 Candidates of Sciences
Division Officers