ФТП, 2007, том 41, выпуск 4ФТП, 2007, том 41, выпуск 4| Другие выпуски | Другие журналы | Поиск | KOI | WIN | DOS |
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| The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors June 1114, 2006 | |
| Wan D., Pouget V., Douin A., Jaulent P., Lewis D., Fouillat P. In-depth resolution for LBIC technique by two-photon absorption | 387 |
|---|---|
| Kalinina E.V., Skuratov V.A., Sitnikova A.A., Kolesnikova E.V., Tregubova , Scheglov M.P. Structural peculiarities of -SiC irradiated by Bi ions | 392 |
| Salh Roushdey, Fitting L., Kolesnikova E.V., Sitnikova A.A., Zamoryanskaya M.V., Schmidt B., Fitting H.-J. Si and Ge nanocluster formation in Silica matrix | 397 |
| Kolesnikova E., Mynbaeva M., Sitnikova A. Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates | 403 |
| Jia G., Arguirov T., Kittler M., Su Z., Yang D., Sha J. Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO | 407 |
| Sellin P.J., Davies A.W., Boroumand F., Lohstroh A., Ozsan M.E., Parkin J., Veale M. IBIC characterization of charge transport in CdTe : Cl | 411 |
| Yakimov E.B., Zhang R.H., Rozgonyi G.A., Seacrist M. EBIC characterization of strained Si/SiGe heterostructures | 417 |
| Krapukhin V.V., Vergeles P.S., Yakimov E.B. Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe | 422 |
| Yakimov E.B., Borisov S.S., Zaitsev S.I. EBIC measurements of small diffusion length in semiconductor structures | 426 |
| Kaminski P., Koz\l owski R., Kozubal M., Zelazko J., Miczuga M., Paw\l owski M. Photoinduced transient spectroscopy of defect centers in GaN and SiC | 429 |
| Cavalcoli D., Cavallini A., Rossi M., Pizzini S. Micro- and nano-structures in silicon studied by DLTS and scanning probe methods | 435 |
| Burakov B.E., Garbuzov V.M., Kitsay A.A., Zirlin V.A., Petrova M.A., Domracheva Ya.V., Zamoryanskaya M.V., Kolesnikova E.V., Yagovkina M.A., Orlova M.P. The use of cathodoluminescence for development of durable self-glowing crystals based on solid solutions YPO--EuPO | 441 |
| Chaika A.N., Bozhko S.I., Ionov A.M., Myagkov A.N., Abrosimov N.V. STM and LEED studies of the atomically ordered terraced Si(557) surfaces | 445 |
| Arguirov T., Seifert W., Jia G., Kittler M. Photoluminescence study on defects in multicrystalline silicon | 450 |
| Breitenstein O., Bauer J., Rakotoniaina J.P. Material-induced shunts in multicrystalline silicon solar cells | 454 |
| Burylova I.V., Petrov V.I., Snopova M.G., Stepovich M.A. Mathematical simulation of distribution of minority charge carriers, generated in multy-layer semiconducting structure by a wide electron beam | 458 |
| Kosolobov S.S., Song Se Ahn, Rodyakina E.E., Latyshev A.V. Initial stages of gold adsorption on silicon stepped surface at elevated temperatures | 462 |
| Fitting H.-J., Salh Roushdey, Schmidt B. Multimodal luminescence spectra of ion-implanted silica | 467 |
| Yu X., Vyvenko O., Kittler M., Seifert W., Mtchedlidze T., Arguirov T., Reiche M. Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding | 471 |
| Zamoryanskaya M.V., Sokolov V.I. Cathodoluminescence study of silicon oxide/silicon interface | 475 |
| Alexandrov S.E., Speshilova A.B., Soloviev Y.V., Eremeychik O.I. AFM investigation of thin post-baked photoresistive films for microsystem technology application | 481 |
| Khrustalev V.S., Bobyl A.V., Konnikov S.G., Maleev N.A., Zamoryanskaya M.V. Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging | 484 |
| Ivanov A.S., Vasilev V.I., Sedova I.V., Sorokin S.V., Sitnikova A.A., Konnikov S.G., Popova T.B., Zamoryanskaya M.V. Cathodoluminescence of laser AB heterostructures | 488 |
| Sokolov R.V., Zamoryanskaya M.V., Kolesnikova E.V., Sokolov V.I. Evolution of luminescence properties of natural oxide on silicon and porous silicon | 492 |
| Afrosimov V.V., Il'in R.N., Sakharov V.I., Serenkov I.T. Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique | 497 |
| Shmidt N.M., Vergeles P.S., Yakimov E.B. EBIC characterization of light emitting structures based on GaN | 501 |