Wurtzite(hexagonal) crystal structure | Remarks | Referens | |
Energy gaps, Eg | 1.970 eV | 300 K | Guo & Yoshida (1994), Teisseyre al. (1994) |
1.9-2.05 eV | 300 K | Zubrilov (2001) | |
2.05 (1) eV | 300K; absorption edge | Tyagai et al. (1977) | |
2.11 eV | 78 K | Osamura et al. (1975) | |
1.89 eV | RT | Foley & Tansley (1986) |
Conduction band | Remarks | Referens | |
Energy separation between Γ valley and M-L valleys | 2.9 ÷ 3.9 eV | 300 K | Zubrilov (2001) |
Energy separation between M-L valleys degeneracy | 6 eV | 300 K | |
Energy separation between Γ valley and A valleys | 0.7÷ 2.7eV | 300 K | |
Energy separation between A valley degeneracy |
1 eV |
300 K | |
Energy separation between Γ valley and Γ1 valleys | 1.1÷ 2.6eV | 300 K | |
Energy separation between Γ1 valley degeneracy |
1 eV |
300 K | |
Valence band | |||
Energy of spin-orbital splitting Eso | 0.003 eV | 300 K | Zubrilov (2001) |
Energy of crystal-field splitting Ecr |
0.017 eV | 300 K | |
Effective conduction band density of states |
9 x 1017 cm-3 | 300 K | |
Effective valence band density of states |
5.3 x 1019 cm-3 | 300 K |
InN, Wurtzite. Band structure. Important minima of
the conduction band and maxima of the valence band. This splitting results
from spin-orbit interaction and from crystal symmetry. 300K; Eg = 1.9 - 2.05 eV; EΓ1 = 3.0 - 4.5 eV; EM-L = 4.8 - 5.8 eV; EA = 2.6 - 4.7 eV; Eso = 0.003 eV; Ecr = 0.017 eV For details see Christensen & Gorczyca (1994), Jenkins (1994), Yeo et al. (1998), Pugh et al. (1999) |
|
InN, Wurtzite. Band structure calculated with an empirical
pseudopotential method The band structure shows a direct gap at Γ, closely similar to that of GaN. Foley &Tansley (1986) |
Brillouin zone of the hexagonal lattice. | |
Brillouin zone for wurtzite crystal. |
|
Rectangular coordinates for hexagonal crystal |
Varshni expression: | ||
Eg = Eg(0) - 2.45 x 10-4
x T2/(T + 624) Eg(300K) = 1.970 eV |
(eV) | Guo & Yoshida (1994),
Teisseyre al. (1994) see also Osamura et al. (1975) |
Bose-Einstein expression: | ||
Eg = Eg(0) - 4.39 x 10-2 x 2/(exp(466/T) - 1) | (eV) |
InN, Wurtzite. The temperature dependences band gap. Broken line
represents approximation (see above Varshni expression of Temperature
dependence of energy gap ) with Eg (0) = 1.994 eV. Solid line represents approximation (see above Bose-Einstein expression of Temperature dependence of energy gap ) with Eg(0) = 1.994 eV Guo & Yoshida (1994) |
InN, Wurtzite. The temperature dependences of the intrinsic carrier
concentration calculated for Eg magnitudes interval
1.9 ÷ 2.05 eV Zubrilov (2001) |
InN/AlN(0001) | Referens | |
Conduction band discontinuity | ΔEc = 2.7 eV | Martin et al. (1996), see also Wei & Zunger (1996) |
Valence band discontinuity | ΔEv = 1.8 eV | |
InN/GaN | ||
Conduction band discontinuity | ΔEc = 0.45 eV | Martin et al. (1996) |
Valence band discontinuity | ΔEv = 1.05 eV |
Wurtzite InN | Remarks | Referens | |
Effective electron mass me | 0.11mo | 300 K | Lambrecht & Segall (1993) |
0.12mo | Calculated effective electron mass | Foley & Tansley (1986) | |
0.11mo | 300 K, plasma edge | Tyagai et al. (1977) |
Wurtzite InN | Remarks | Referens | |
Effective hole masses (heavy)mh | 1.63 mo | 300 K | Xu & Ching (1993), Yeo et al. (1998), Pugh et al. (1999) |
0.5 mo | calculated | Foley & Tansley (1986) | |
Effective hole masses (light) mlp | 0.27 mo | 300 K | Xu & Ching (1993), Yeo et al. (1998), Pugh et al. (1999) |
0.17 mo | calculated | Foley & Tansley (1986) | |
Effective hole masses (split-off band) ms | 0.65 mo | 300 K | Xu & Ching (1993), Yeo et al. (1998), Pugh et al. (1999) |
Effective mass of density of state mv | 1.65 mo | 300 K | Xu & Ching (1993), Yeo et al. (1998), Pugh et al. (1999) |
Ionization energies of Shallow Donors |
||
Native defect level VN |
<40-50 eV |
Tansley & Egan (1992); Jenkins & Dow (1989) |
InN, Wurtzite. Level positions in the forbidden gap of InN.
I - experimental data that fall into five groups A-E. II - the calculated energies of point defects Tansley & Egan (1992) |