InAs - Indium Arsenide

Thermal properties

Bulk modulus 5.8·1011 dyn cm-2
Melting point 942 °C
Specific heat 0.25 J g-1 °C-1
Thermal conductivity 0.27 W cm-1 °C-1
Thermal diffusivity 0.19 cm2s-1
Thermal expansion, linear 4.52·10-6 °C-1


Temperature dependence of thermal conductivity.
n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017;
p-type sample, po (cm-3): 3. 2.0·1017.
(Tamarin and Shalyt [1971]).
Temperature dependences of thermal conductivity for high temperatures
Electron concentration
no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016. (Okhotin et al. [1972]).
Temperature dependence of specific heat at constant pressure
(Piesbergen[1963]).
For 298K < T < 1215K
Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).
(Barin et al. [1977]).
Temperature dependence of linear expansion coefficient
(low temperature)
(Sparks and Swenson[1967]).
Temperature dependence of linear expansion coefficient
(high temperature)
(Sirota and Berger[1959]).
Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect)
Electron concentration at 77K
no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019.
(Domanskaya et al. [1970]).
Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):
for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.