GaInP - Gallium Indium Phosphide

Mechanical properties, elastic constants, lattice vibrations

Basic Parameter
Elastic constants
Micro Hardness
Acoustic Wave Speeds
Phonon frequencies

Basic Parameter


Ga0.47In0.53As     GaxIn1-xAs Remarks Referens
Bulk modulus 6.62·1011 dyn/cm2 (5.81+1.72x)·1011 dyn/cm2 300 K Goldberg Yu.A. & N.M. Schmidt (1999)
Debye temperature 330 K (280+110x) K    
Density 5.50 g/cm3 5.68-0.37x g/cm3 300 K Goldberg Yu.A. & N.M. Schmidt (1999)
Melting point, Tm   ~= 1100° C    
Specific heat 0.3 J g-1°C -1      
Thermal conductivity 0.05 W cm-1 °C -1
see Temerature dependences    
Thermal expansion coefficient, linear 5.66x10-6 °C -1 see Temerature dependences    
Hardness on the Mohs scale   ***    
Surface microhardness
(using Knoop's pyramid test)

see Micro Hardness    
Piezoelectric constant e14= -(0.045+0.115x) C/m2    
Cleavage plane {110} {110}    
Lattice constant 5.8687 A (6.0583-0.405x) A    


Elastic constants at 300K

C11 = (8.34 + 3.56x)·1011 dyn/cm2
C12 = (4.54 + 0.8x)·1011 dyn/cm2
C44 = (3.95 + 2.01)·1011 dyn/cm2
Cleavage plane {110}
Bulk modulus (compressibility-1)  
Bs=(C11+2C12)/3 Bs = (5.81+1.72x)·1011 dyn/cm2
Anisotropy factor  
C'=(C11-C12)/2 A = (0.48+0.07x)
Shear modulus  
C'=(C11-C12)/2 C' = (1.9+1.38x)·1011 dyn/cm2
[100] Young's modulus  
Yo=(C11+2C12)·(C11-C12)/(C11+C12) Yo= (5.14+3.39x)·1011 dyn/cm2
[100] Poisson ratio  
σo=C12/(C11+C12) σo = (0.35-0.04x)

Micro Hardness

Micro hardness (Hv) and energy gap values Eg vs composition of three alloy systems:
In1-xGaxAs (1, 2),
In1-xGaxAs0.9Sb0.1 (3, 4) and
InAs1-x-0.1Sb0.1Py (5, 6).
Measured using (111) oriented epilayers at 50 g weight (stress) on Vikkers pyramid
B.A.Matveev et al.   Izv.Akad.Nauk SSSR, Neorg.Mater, 26 (1990), 639
Contact authors: B.A.Matveev
Knoop microhardness anisotropy on the {100} plane for Ga0.47In0.53As.
Adachi   (1992)

Acoustic Wave Speeds

Wave propagation
Direction
Wave character Expression for wave speed Wave speed
(in units of 105 cm/s)
[100] VL (longitudinal) (C11/&rho)1/2
    3.83+0.90x
VT (transverse) (C44/&rho)1/2
    2.64+0.71x
[100] Vl [(C11+Cl2+2C44)/2&rho]1/2
    4.28+0.96x
Vt|| Vt||=VT=(C44/ρ)1/2
    2.64+0.71x
Vt [(C11-C12)/2&rho]1/2
    1.83+0.65x
[111] Vl' [(C11+2C12+4C44)/3&rho]1/2
    4.41+0.99x
Vt' [(C11-C12+C44)/3&rho]1/2
    2.13+0.67x

Phonon frequencies

Raman-active phonon modes in GaxIn1-xAs.
The symbols show experimental results.
1 - LO phonon behavior,
2 - TO phonon behavior,
3,4 - mixed mode behavior.
Pearsall et al. (1983)