GaInAs - Gallium Indium Arsenide

Basic Parameters at 300 K
Band structure and carrier concentration
        Basic Parameters
        Band Structure
        Intrinsic carrier concentration
        Effective Density of States in the Conduction and Valence Band
        Temperature Dependences
        Dependence on Hydrostatic Pressure
        Band Discontinuities at Heterointerfaces
         Energy gap narrowing at high doping levels
        Effective Masses and Density of States
        Donors and Acceptors
Electrical Properties
        Basic Parameters of Electrical Properties
        Mobility and Hall Effect
        Two-Dimensional Electron and Hole Gas Mobility in Heterostructures
        Transport Properties in High Electric Fields
        Impact Ionization
        Recombination Parameters
Optical properties
Thermal properties
        Basic parameters
        Thermal conductivity
        Lattice properties
Mechanical properties
        Basic Parameters
        Elastic Constants
        Micro Hardness
        Acoustic Wave Speeds
        Phonon Frequencies
Magnetic properties