Chow, T.P, Ghezzo. SiC power devices. in III-Nitride, SiC, and Diamond
Materials for Electronic Devices. Eds. Gaskill D.K, Brandt C.D. and Nemanich
R.J., Material Research Society Symposium Proceedings, Pittsburgh,
PA. 423 (1996), 69-73.
Davydov V.Yu., Yu.E. Kitaev, I.N. Goncharuk, A.N. Smirnov, J. Graul, O.
Semchinova, D. Uffmann, M.B. Smirnov, A.P. Mirgorodsky, R.A. Evarestov. Phonon
dispersion and Raman scattering in hexagonal GaN and AlN, Phys.
Rev. B58(19) (1998)
12899-12907
Dmitriev, A.V, Oruzheinikov, A.L. Radiative recombination rates in GaN,
InN, AlN and their solid solutions.. in III-Nitride, SiC, and Diamond
Materials for Electronic Devices. Eds. Gaskill D.K, Brandt C.D. and Nemanich
R.J., Material Research Society Symposium Proceedings, Pittsburgh,
PA. 423 (1996), 69-73.
Edwards, J., Kawabe K., Stevens G., Tredgold R.H., Sol. State Commun.
3 (1965); 99-100.
Goldberg Yu. in Properties of Advanced SemiconductorMaterials GaN, AlN,
InN, BN, SiC, SiGe . Eds. Levinshtein M.E., Rumyantsev S.L., Shur M.S.,
John Wiley & Sons, Inc., New York, 2001, 31-47.
Gorczyca, I., Christensen N.E., Phys. B 185 (1993), 410-414.
Gorczyca, I., Svane A., Christensen N.E., Internet J. Nitride Sem. Res.
2, Article 18 (1997).
Gorczyca, I., Svane A., Christensen N.E., Internet J. Nitride Sem.
Res. 2, Article 18 (1997).
Guo, Q, Yoshida A., Jpn. J. Appl. Phys. 33, part 1, 5A
(1994), 2453-2456.
King, S.W, Benjamin M.C., Nemanich R.J., Davis R.F., Lambrecht W.R.L.,
in Gallium Nitride and Related Materials. Eds. Ponce F.A, Dupuis
R.D., Nakamura S. and Edmond J.A., Material Research Society Symposium
Proceedings, Pittsburgh, PA 395 (1996), 375-380.
Kobayashi, A., Sankey, O.F., Volz, S.M., Dow, J.D., Semiempirical tight-binding
band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO.
Phys. Rev. B28 (1983) 935.
Levinshtein, M.E., S.L. Rumyantsev, and M.S. Shur (eds.), Properties
of Advanced SemiconductorMaterials GaN, AlN, InN, BN, SiC, SiGe, John
Wiley & Sons, Inc., New York, 2001, p.194.
Loughin, S., French R.H., in Properties of Group III Nitrides.
Ed. Edgar J.H., EMIS Datareviews Series N11(1994) an INSPEC publication,
175-188.
Madelung, O. (ed.), Semiconductor: group IV elements and III-V compound.
Series "Data in science and technology", Ed. R.Poerschke, Shpringer -Verlag
, Berlin,1991, p.164.
Martin, G., Botchkarev A., Rockett A., Morkoc H., Valence-band discontinuities
of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission
spectroscopy.
Appl. Phys. Lett. 68, 18 (1996), 2541-2543.
Meng, W.J., in Properties of Group III Nitrides. Ed. Edgar J.H.,
EMIS Datareviews Series, N11(1994) an INSPEC publication, 22-29.
McNeil, L.E, Grimsditch M., French R.H., J. Am. Ceram. Soc.
76, 5 (1993), 1132-1136.
Mohammad, S.N., Salvador A.A., Morkoc H., Proc. IEEE, 83,
10 (1995), 1306-1355.
Mohammad S.N. and H.Morkoc, Prog. Quant. Electron.20 (1996)
361.
Morkoc, H., Strite S., Gao G.B., Lin M.E., Sverdlov B., Burns M., Large-band-gap
SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies.
J. App. Phys. 76, 3 (1994), 1363-1398.
Qian W. , Skowronski M., Rohrer G.R.Structural defects and their relationship
to nucleation of GaN thin films. in III-Nitride, SiC, and Diamond Materials
for Electronic Devices. Eds. Gaskill D.K, Brandt C.D. and Nemanich R.J.,
Material Research Society Symposium Proceedings, Pittsburgh, PA.
423 (1996), 475-486.
Roskovcova, L., Pastrnak, J., Czech. J. Phys. B30 (1980)
586.
Sanjurjo, J.A, Lopez-Cruz, E., Vogi, P., Cardona, M., Dependence on volume
of the phonon frequencies and the ir effective charges of several III-V semiconductors.
Phys. Rev.
B28 (1983) 4579.
Teisseyre H., Perlin P., Suski T., Grzegory I., Porowski S., Jun J., Pietraszko
A., Moustakas T.D. Temperature dependence of the energy gap in GaN bulk single
crystals and epitaxial layer.
J. Appl. Phys. 76, 4 (1994) 2429-2434.
Touloukian, Y.S, Kirby R.K., Taylor R.E., Lee T.Y.R. (Eds.) Thermophysical
Properties of Matter, 13 Plenum Press, New York, 1977.
Van Camp, P.E, Van Doren V.E., Devreese J.T., High-pressure properties
of wurtzite- and rocksalt-type aluminum nitride. Phys
Rev. B
44, 16 (1991), 9056-9059.
Walker, D., X. Zhang, Saxler A., Kung P., Xu J., Razeghi M., AlxGa1
- xN ( 0 ≤ x ≤ 1 ) ultraviolet photodetectors grown on sapphire
by metal-organic chemical-vapor deposition. Appl. Phys. Lett, 70, 8 (1997), 949-951.
Wongchotiqul, K., Chen N., Zhang D.P., Tang X., Spencer M.G., in Gallium
Nitride and Related Materials. Eds. Ponce F.A., Dupuis R.D., Nakamura
S. and Edmond J.A., H12 Material Research Society Symposium Proceedings,
395 (1996), 279-282.
Yamashita, H, Fukui, K., Misawa, S., Yoshida, S., J. Appl. Phys. 50 (1979) 896.
Zarwasch, R., Rille E., Pulker H.K., Fundamental optical absorption edge
of reactively direct current magnetron sputter-deposited AlN thin films. J. Appl. Phys. 71, 10 (1992), 5275-5277.
Gallium, Aluminum and Indium Nitrides. 4th International Workshop" September
18-19, 2000 St Petersburg, Russia.
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