AlN - Inllium Nitride

Recombination Parameters

    Remarks Referens
Radiative recombination coefficient 0.4 x 10-10 cm3 s-1. 300 K Walker et al. (1997)
Effective majority carrier (electrons) lifetime (effective lifetime of holes on the traps) >= 35 ms 300 K
Only calculated data are available
AlN. Radiative recombination coefficient B versus temperature.
Dmitriev & Oruzheinikov (1996)