 Final Programme
Last updated May 14, 2001
Please note that the
Opening session and the rest of the first day programme will
be held in the city at the Educational Center of the Ioffe Institute.
Participants arriving on Monday should go to the Educational Center,
Ul. Khlopina 8/3.
See map how to get the symposium venue from the
metro stations
"Plochshad Muzhestva" or "Polytechnicheskaya".
- Chair: L. Esaki
-
- Leo Esaki
Opening remarks
- OS.01i
- Zh. I Alferov
Quantum dots heterostructures and lasers
- OS.02i
- F. Capasso
Micro- and nano- elctro mechanical systems (MEMS and NEMS) based on vacuum
fluctuation forces: a new frontier of Nanotechnology
- Chair: P. S. Kop'ev
- NT.01i
- A. Y. Cho,
D. L. Sivco, H. M. Ng, C. Gmachl, A. Tredicucci,
R. Colombelli and F. Capasso
Molecular beam epitaxy (MBE) of quantum devices
- NT.03
- R. N. Kyutt,
T. V. Shubina, S. V. Sorokin, S. V. Ivanov,
P. S. Kop'ev, A. Waag, G. Landwehr and M. Willander
X-ray diffraction study of CdSe/BeTe nanostructures grown by MBE with
stressor-controlled interfaces
- NT.04
- V. A. Solov'ev,
A. A. Toropov, B. Ya. Mel'tser, Ya. V. Terent'ev,
R. N. Kyutt, A. A. Sitnikova, A. N. Semenov,
S. V. Ivanov, Motlan, E. M. Goldys and P. S. Kop'ev
Novel GaAs/GaSb heterostructures emitting at 2 µm wavelength
- NT.05
- M. Itoh and T. Ohno
Evolution of RHEED intensity in the stimulated homoepitaxial growth of GaAs (001)
- Chair: M. Willander
- SBNS.01i
- K. Tanaka
Advanced silicon nanotechnology at JRCAT
- SBNS.02
- A. I. Yakimov,
A. V. Dvurechenskii, N. P. Stepina, A. V. Nenashev
and A. I. Nikiforov
Spatially inderect excitons in self-assembled Ge/Si quantum dots
- SBNA.03
- Yu. G. Arapov,
O. A. Kuznetsov, V. N. Neverov, G. I. Harus,
N. G. Shelushinina and M. V. Yakunin
Impurity potential fluctuations for selectively doped p-Ge/Ge1-xSix
heterostructures in the quantum Hall regime
- Chair: F. Capasso
- IRP.01
- V. A. Shalygin
L. E. Vorobjev, A. V. Glukhovskoy, S. N. Danilov,
V. Yu. Panevin, D. A. Firsov, B. V. Volovik,
N. N. Ledentsov, D. A. Livshits, V. M. Ustinov,
Yu. M. Shernyakov, A. F. Tsatsul'nikov, A. Weber
and M. Grundmann
Near and mid infrared spectroscopy of InGaAs/GaAs quantum dot structures
- IRP.02
- A. A. Belyanin,
F. Capasso, V. V. Kocharovsky, Vl. V. Kocharovsky
and M. O. Scully
Resonant parametric generation of infrared radiation on intersubband
transitions in low-dimensional semiconductor heterostructures
- IRP.03
- I. V. Erofeeva, V. I. Gavrilenko,
O. Astafiev, Y. Kawano and S. Komiyama
Time constant of far IR response of quantum Hall device
- IRP.04
- A. A. Afonenko,
V. Ya Aleshkin, and N. B. Zvonkov
Nonlinear generation of mid-infrared radiation in quantum well laser
- Chair: R. Dupuis
- WBGN.01i
- B. Gil
Excitons in nitride-based low-dimensional systems
- WBGN.02
- V. Dneprovskii,
S. Gavrilov, E. Muljarov, A. Syrnicov and E. Zhukov
Optical properties of CdS nanostructures crystallized in the pores of
insulating template
- WBGN.03
- O. Schoen, H. Protzmann,
M. Luenenbuerger, B. Schineller, M. Dauelsberg,
G. P. Yablonskii, E. V. Lutsenko, A. V. Mudryi
and M. Heuken
Planetary® production type MOCVD reactors for blue laser applications in the
GaInN material system
- Chair: R. Abram
- MPC.01i
- V. D. Kulakovskii,
A. I. Tartakovskii, D. N. Krizhanovskii, N. A. Gippius
and M. S. Skolnick
Nonlinear effects in dense two-dimensional exciton–polariton system
- MPC.02
- C. Möller,
N. A. Maleev, W. Passenberg, J. Böttcher,
H. Künzel, A. V. Sakharov, A. E. Zhukov,
A. F. Tsatsul'nikov and V. M. Ustinov
Development of 1300 nm GaAs-based microcavity light-emitting diodes
- MPC.03
- A. A. Dukin,
N. A. Feoktistov, V. G. Golubev,
A. V. Medvedev, A. B. Pevtsov and A. V. Selkin
1.5 µm Fabry-Perot microcavities based on hydrogenated silicon and
related materials
- MPC.04
- J. Muszalski,
T. Ochalski, E. Kowalczyk, A. Wojcik, H. Wrzesinska,
B. Mroziewicz and M. Bugajski
InGaAs resonant cavity light emitting diodes (RC LEDs)
- MPC.05
- A. L. Yablonskii, E. A. Muljarov,
N. A. Gippius, S. G. Tikhodeev, Tohru Fujita and Teruya Ishihara
Polariton effect in a photonic crystal slab
- Chair: N. A. Bert
- NC.01i
- P. Girard
Electrostatic Force Microscopy, principles and applications to semiconductor
materials and devices
- NC.03
- A. Ankudinov, A Titkov,
V. Evtikhiev, E. Kotelnikov, D. Livshiz, I. Tarasov,
A. Egorov, H. Riechert, H. Huhtinen and R. Laiho
Electrostatic force microscopy study of the electric field distribution
in semiconductor laser diodes under applied biases
- NC.04
- M. Cannaerts,
R. J. M. Vullers and Chris Van Haesendonck
Scanning Joule expansion microscopy as a tool for studying local heating
phenomena
- NC.05
- Yu. V. Dubrovskii,
A. Patane, P. N. Brounkov, E. E. Vdovin,
I. A. Larkin, L. Eaves, P. C. Main, D. K. Maude,
J.-C. Portal, D. Yu. Ivanov, Yu. N. Khanin,
V. V. Sirotkin, A. Levin, M. Henini and G. Hill
Magneto-tunnelling spectroscopy of localised and extended states in
a quantum well containing quantum dots
- Chair: V. D. Kulakovskii
- QW/SL.01
- V. V. Afonin,
V. L. Gurevich and R. Laiho
Theory of magnetophonon resonance in quantum wells. Tilted magnetic field
- QW/SL.02
- S. D. Ganichev,
V V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko,
M. Sollinger, F.-P. Kalz, D. Weiss, J. Eroms and W. Prettl
Magnetic field induced circular photogalvanic effect in InAs quantum wells
- QW/SL.03
- S. R. Schmidt,
A. Seilmeier, E. A. Zibik, L. E. Vorobjev,
A. E. Zhukov and V. M. Ustinov
Resonant Gamma–X-transfer in GaAs/AlAs quantum-well structures
- QW/SL.04
- A. A. Toropov,
S. V. Sorokin, S. V. Ivanov, N. Hori,
M. Ichida, A. Nakamura, A. Waag and G. Landwehr
Linearly-polarized photoluminescence from type II ZnSe/BeTe
quantum wells with atomically-flat interfaces
- QW/SL.05
- Yu. V. Dubrovskii,
V. A. Volkov, E. E. Vdovin, L. Eaves, P. C. Main,
D. K. Maude, J.-C. Portal, A. Neumann, M. Henini,
J. C. Maan and G. Hill
Unconventional Landau states in the quantum well with embedded self-arranged
quantum dots
- Chair: R. A. Suris
- QWR/QD.01i
- R. D. Dupuis,
Jae-Hyun Ryou, C. V. Reddy,Venkatesh Narayanamurti,
D. T. Mathes, R. Hull, D. A. Kellogg,
G. Walter and N. Holonyak, Jr.
Properties of InP self-assembled quantum dots embedded in
In0.49(AlxGa1-x)0.51P grown
by metalorganic chemical vapor deposition
- QWR/QD.02
- M.-E. Pistol,
N. Panev, V. Zwiller, L. Samuelson, W. Jiang,
B. Xu and Z. Wang
Random telegraph noise in InGaAs self-assembled quantum dots
- QWR/QD.03
- A. S. Shkolnik,
E. B. Dogonkin, V. P. Evtikhiev, E. Yu. Kotelnikov,
I. V. Kudryashov, V. G. Talalaev, B. V. Novikov,
J. W. Tomm and G. Gobsch
Photoluminescence decay time measurements from self-organized InAs/GaAs
quantum dots grown on misoriented substrates
- QWR/QD.04
- A. E. Belyaev,
A. Patané, L. Eaves, P. C. Main, M. Henini
and S. V. Danylyuk
Double injection currents in p-i-n diodes incorporating self-assembled quantum dots
- Chair: L. V. Keldysh
- TP.01
- Yu. V. Dubrovskii,
R. Hill, V. A. Volkov, V. G. Popov, E. E. Vdovin,
D. Yu. Ivanov, L. Eaves, P. C. Main, D. K. Maude,
J.-C. Portal, M. Henini, G. Hill and J. C. Maan
Peculiarities in equilibrium tunneling between disordered two-dimensional
electron systems: from Fermi edge singularity to linear gap in high magnetic
field
- TP.02
- P. I. Arseev, N. S. Maslova,
V. I. Panov and S. V. Savinov
Non-equilibrium tunneling effects of interacting Hubbard–Anderson impurities
- GPLDS.01p
- M. V. Entin and L. I. Magarill
Spin-orbit interaction of electrons on curved surface
- GPLDS.02p
- M. V. Entin
and M. M. Mahmoodian
Surface and edge energy of electron gas in nanocrystals
- GPLDS.03p
- J. Brüning,
V. A. Geyler, V. A. Margulis and M. A. Pyataev
Ballistic conductance of a quantum sphere
- IRP.05p
- A. A. Prokofiev,
I. N. Yassievich, A. Blom, M. A. Odnoblyudov
and K.-A. Chao
Configuration interaction applied to resonant states in semiconductors and
semiconductor nanostructures
- IRP.06p
- E. A. Zibik,
L. E. Vorobjev, S. R. Schmidt, A. Seilmeier,
D. A. Firsov, V. L. Zerova and E. Towe
Dynamics of electrons at intersubband excitation in asymmetric tunnel-coupled
quantum well structure
- MPC.06p
- R. Abram,
S. Brand, M. A. Kaliteevski, A. V. Kavokin,
V. V. Nikolaev, M. V. Maximov and C. M. Sotomayor Torres
The coupling of zero-dimensional exciton and photon states: a quantum dot
in a spherical microcavity
- MPC.07p
- V. G. Golubev, V. A. Kosobukin,
D. A. Kurdyukov, A. V. Medvedev, A. B. Pevtsov,
S. M. Samoilovich and L. M. Sorokin
Photonic crystals with tunable band gap based on infilled and inverted
opal-silicon composites
- MPC.08p
- D. N. Krizhanovskii,
A. I. Tartakovskii, V. D. Kulakovskii,
M. S. Skolnick and J. S. Roberts
Multiple polariton scattering in semiconductor microcavities
- MPC.09p
- V. V. Popov,
G. M. Tsymbalov and T. V. Teperik
Guided plasmon-polaritons in a planar Bragg microresonator with
two-dimesional electron system
- MPC.10p
- S. G. Romanov,
T. Maka, C. M. Sotomayor Torres, M. Müller
and R. Zentel
Comparison of dye photoluminescence spectra in direct and inverted
opaline films
- NT.09p
- A. G. Banshchikov,
O. V. Anisimov, N. F. Kartenko, M. M. Moisseeva,
N. S. Sokolov and V. P. Ulin
Epitaxial stabilization of a-PbO2 structure in MnF2
layers on Si and GaP
- NT.10p
- R. I. Batalov,
R. M. Bayazitov, I. B. Khaibullin, E. I. Terukov
and V. Kh. Kudoyarova
Pulsed ion-beam synthesis of beta-FeSi2 layers on Si implanted
by Fe+ ions
- NT.11p
- D. V. Brunev,
I. G. Neizvestny, N. L. Shwartz
and Z. Sh. Yanovitskaya
Schwoebel barrires as the reason for 3D-island formation during heteroepitaxy
- NT.12p
- G. E. Cirlin,
V. A. Egorov, B. V. Volovik, A. F. Tsatsul'nikov,
V. M. Ustinov, N. N. Ledentsov, N. D. Zakharov,
P. Werner and U. Gösele
Effect of growth conditions on optical properties of Ge submonolayer
nanoiclusions in a Si matrix grown by molecular beam epitaxy
- NT.13p
- M. D. Efremov,
V. A. Volodin, V. A. Sachkov, V. V. Preobrazhenski,
B. R. Semyagin, V. V. Bolotov, E. A. Galaktionov
and A. V. Kretinin
Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311)
and (001) surfaces
- NT.14p
- I. P. Ipatova,
S. G. Konnikov, M. B. Lifchits and A. Yu. Maslov
Effect of the surface relaxation on spinodal decomposition of semiconductor
epitaxial films
- NT.15p
- S. Yu. Karpov
and Yu. N. Makarov
Surface segregation in epitaxy of III-V compounds
- NT.16p
- I. A. Karpovich,
N. V. Baidus, B. N. Zvonkov, S. V. Morozov,
D. O. Filatov and A. V. Zdoroveishev
Morphology and photoelectronic properties of the InAs/GaAs surface quantum
dots grown by Vapor Phase Epitaxy
- NT.17p
- A. R. Kovsh,
J. Y. Chi, J. S. Wang, L. Wei, Y. T. Wu,
C. H. Chen, B. V. Volovik, A. F. Tsatsul'nikov
and V. M. Ustinov
MBE growth of high quality GaAsN bulk layers
- NT.18p
- V. I. Kozlovsky,
Yu. G. Sadofyev and Ya. K. Skasyrsky
E-beam irradiation effect on CdSe/ZnSe QDs formation by MBE
- NT.19p
- A. A. Marmalyuk,
O. I. Govorkov, A. V. Petrovsky, D. B. Nikitin,
A. A. Padalitsa, P. V. Bulaev, I. V. Budkin
and I. D. Zalevsky
Indium distribution in pseudomorphic InGaAs/(Al)GaAs quantum wells grown
by MOCVD
- NT.20p
- A. I. Morosov,
A. S. Sigov and A. V. Bobyl
Thickness-roughness phase diagram of multilayer ferromagnet-antiferromagnet
nanostructures and their hysteresis loops
- NT.21p
- V. A. Odnoblyudov,
A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov,
N. A. Maleev and V. M. Ustinov
Thermodynamic analysis of MBE growth of quarternary InGaAsN compounds
- NT.22p
- V. Ya. Prinz, A. V. Chehovskiy,
V. V. Preobrazenski, B. R. Semyagin and A. K. Gutakovsky
A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled
length
- NT.23p
- A. N. Semenov,
V. A. Solov'ev, B. Ya. Mel'tser,
V. S. Sorokin, S. V. Ivanov and P. S. Kop'ev
Anion incorporation in AlGaAsSb alloys grown by MBE
- NT.24p
- I. P. Soshnikov,
N. N. Ledentsov, B. V. Volovik, A. Kovsh,
N. A. Maleev, S. S. Mikhrin, O. M. Gorbenko,
W. Passenberg, H. Kuenzel, N. Grote, V. M. Ustinov,
H. Kirmse, W. Neuman, P. Werner, N. D. Zakharov,
D. Bimberg and Zh. I. Alferov
Nitrogen-activated phase separation in InGaAsN/GaAs heterostructures
grown by MBE
- NT.25p
- A. N. Starodubtsev
and V. A. Shchukin
Effect of species-dependent surface atomic mobility on pattern selection
during alloy growth
- NT.26p
- N. L. Yakovlev,
Y. V. Shusterman and L. J. Schowalter
Thin epitaxial Al and Cu films grown on CaF2/Si(111)
- QW/SL.06p
- V. Ya. Aleshkin,
V. I. Gavrilenko and D. B. Veksler
Shalow acceptors in strained MQW heterostructures in strong magnetic fields
- QW/SL.07p
- A. D. Andreev and
A. V. Subashiev
Electron optical orientation in strained superlattices
- QW/SL.08p
- L. Deych,
A. Yamilov and A. Lisyansky
Polariton local states in periodic Bragg multiple quantum well structures
- QW/SL.09p
- S. D. Ganichev, S. N. Danilov,
V. V. Bel'kov, E. L. Ivchenko, L. E. Vorobjev,
W. Wegscheiderg, M. Bichler and W. Prettl
Spin sensitive bleaching of absorption in p-type GaAs/AlGaAs QWs
- QW/SL.10p
- L. E. Golub
and S. Pedersen
Spin-orbit interaction in AlGaAs/GaAs p-type quantum wells–a possible
explanation of the `metal-insulator' transition observed in two-dimensional
hole systems
- QW/SL.11p
- A. S. Gurevich,
V. P. Kochereshko, A. V. Platonov, D. R. Yakovlev,
W. Ossau, A. Waag and G. Landwehr
Natural in-plane optical anisotropy of ZnSe/BeTe superlattices with no-common
atom at the interfaces
- QW/SL.12p
- I. N. Kotel'nikov
and S. E. Dizhur
Persistent 2D states of delta-layer quantum well and resonant polaron
in delta-GaAs/Al structures
- QW/SL.13p
- V. A. Kulbachinskii,
R. A. Lunin, A. V. Golikov, V. A. Rogozin,
V. G. Mokerov, Yu. V. Fedorov, A. V. Hook and
Yu. V. Khabarov
Optical and transport properties of short period InAs/GaAs superlattices
- QW/SL.14p
- O. L. Lazarenkova
and A. A Balandin
Electron dispersion in a three-dimensional regimented quantum dot superlattice
- QW/SL.15p
- D. G. Revin,
V. Ya. Aleshkin, D. M. Gaponova,
V. I. Gavrilenko, Z. F. Krasil'nik,
B. N. Zvonkov and E. A. Uskova
Investigation of hot electron distribution by interband transmittance in
n-type InGaAs/GaAs MQW heterostructures
- QW/SL.16p
- V. A. Volodin,
M. D. Efremov, V. A. Sachcov, V. V. Preobrazhenski,
B. R. Semyagin, E. A. Galaktionov and D. A. Orehov
Raman study of phonon-plasmon coupling modes in tunnelling GaAs/AlAs SLs,
grown on (311) and (001) surfaces
- QW/SL.17p
- A. Yu. Silov,
N. S. Averkiev, P. M. Koenraad and J. H. Wolter
Interaction in the final state of the interface luminescence with
delta-doped layers
- QWR/QD.05p
- P. N. Brunkov,
A. Patane, A. Levin, L. Eaves, P. C. Main,
Yu. G. Musikhin, B. V. Volovik, A. E. Zhukov,
V. M. Ustinov and S .G. Konnikov
Modulation of the optical absorption in self-organized InAs/GaAs quantum dots
- QWR/QD.07p
- S. V. Goupalov,
R. A. Suris and P. Lavallard
Homogeneous broadening of the zero optical phonon spectral line in
semiconductor quantum dots
- QWR/QD.08p
- A. Ya. Shik,
H. Ruda and E. H. Sargent
Non-equilibrium carriers in type-II quantum dots
- QWR/QD.09p
- G. Ya. Slepyan,
S. A. Maksimenko, V. P. Kalosha, A. Hoffmann and D. Bimberg
Effective medium approach for planar QD structures
- QWR/QD.10p
- V. G. Talalaev,
B. V. Novikov, M. A. Smirnov, G. Gobsch, R. Goldhahn,
A. Winzer, G. E. Cirlin, N. K. Polyakov,
V. N. Petrov, V. A. Egorov and V. M. Ustinov
Photoluminescense of isolated quantum dots in metastable InAs arrays
- QWR/QD.11p
- I. I. Yakimenko,
A. M. Bychkov and K.-F. Berggren
Spontaneous magnetization in single and coupled quantum dots
- SBNS.04p
- A. G. Milekhin,
A. I. Nikiforov, O. P. Pchelyakov, S. Schulze and
D. R. T. Zahn
Size-selective Raman scattering in self-assembled Ge/Si quantum dot
superlattices
- Chair: P. Girard
- NC.02i
- M. V. Kovalchuk
X-ray standing wave technique–structure-sensitive spectroscopy for
nanoscale-samples. New perspectives with synchrotron radiation
- NC.06
- E. E. Vdovin,
A. Levin, A. Patanè, L. Eaves, P. C. Main,
Yu. N. Khanin, Yu. V. Dubrovskii, M. Henini
and G. Hill
Spatial mapping of the electron eigenfunctions in InAs self-assembled
quantum dots by magnetotunneling
- NC.07
- R. Gulyamov, E. Lifshitz,
E. Cohen, A. Ron and H. Shtrikman
A study of semiconductor quantum structures by microwave modulated
photolumenescence
- NC.08
- H. Karl, A. Wenzel,
B. Stritzker, R. Claessen, V. N. Strocov,
G. E. Cirlin, V. A. Egorov, N. K. Polyakov,
V. N. Petrov, V. M. Ustinov, N. N. Ledentsov
and Zh. I. Alferov
Stoichiometry and atomic concentration depth profiles in InAs/Si quantum dot
systems by Rutherford Backscattering Spectroscopy and Secondary Ion Mass
Spectroscopy
- Chair: K. Tanaka
- NT.02i
- O. P. Pchelyakov
State of the art and perspectives of molecular beam epitaxy development
- NT.06
- V. Ya. Prinz, D. Grützmacher,
A. Beyer, C. David, B. Ketterer and E. Deccard
A new technique for fabricating three-dimensional micro- and nanostructures
of various shapes
- NT.07
- L. Pasqualli,
S. D'Addato, S. Nannarone, N. S. Sokolov,
S. M. Suturin and H. Zogg
Initial stages of growth and formation of CaF2 nanostructures
on Si (001)
- NT.08
- N. D. Zakharov,
G. E. Cirlin, P. Werner, U. Gösele, G. Gerth,
B. V. Volovik, N. N. Ledentsov and V. M. Ustinov
Structure and optical properties of periodic submonolayer insertions of
Ge in Si grown by MBE
- 2DEG.04p
- N. V. Agrinskaya,
Yu. L. Ivanov, V. M. Ustinov and D. A. Poloskin
Manifestation of the upper Hubbard band in conductivity of 2D p-GaAs-AlGaAs
structures
- 2DEG.05p
- A. V. Germanenko,
G. M. Minkov and O. E. Rut
Simulation approach to weak localization in inhomogeneous
two-dimensional systems
- 2DEG.06p
- G. M. Minkov,
A. V. Germanenko, O. E. Rut, B. N. Zvonkov,
E. A. Uskova and A. A. Birukov
The role of doped layers in dephasing of 2D electrons in quantum well structures
- EN.05p
- P. Diaz Arencibia
and I. Hernandez-Calderon
Determination of the minimum island size for full exciton localization due to
thickness fluctuations in Zn1-xCdxSe quantum wells
- EN.06p
- A. Kavokin and
G. Malpuech
Vertical motional narrowing of exciton-polaritons in GaN based multiple
quantum wells
- EN.07p
- A. Klochikhin,
A. Reznitsky, L. Tenishev, S. Permogorov, W. Lundin,
A. Usikov, S. Sorokin, S. Ivanov, M. Schmidt,
H. Kalt and C. Klingshirn
Exciton localization by clusters in diluted bulk InGaN and two-dimensional
ZnCdSe solid solutions
- EN.08p
- E. S. Moskalenko,
K. F. Karlsson, P. O. Holtz, B. Monemar,
W. V. Schoenfeld, J. M. Garcia and P. M. Petroff
The formation of the charged exciton complexes in self-assembled InAs single
quantum dots
- EN.09p
- M. O. Nestoklon and
E. L. Ivchenko
Linearly-polarized optical transitions at type-II interfaces in the
tight-binding approach
- EN.10p
- R. A. Sergeev and
R. A. Suris
Singlet and triplet states of X+ and X- trions in
a 2D quantum well
- EN.11p
- V. V. Travnikov,
V. H. Kaibyshev, M. Rabe and F. Henneberger
Resonant exciton-phonon spectra in ZnCdSe/ZnSe single QW: Raman scattering
and hot luminescence; extended and localized excitons
- EN.12p
- M. M. Voronov and
E. L. Ivchenko
Excitons and exciton oscillator strengths in two-dimensional superlattices
- LOED.04p
- G. S. Sokolovskii,
E. U. Rafailov, A. G. Deryagin, V. I. Kuchinskii,
D. J. L. Birkin and W. Sibbett
Quantum-well curved-grating DBR laser structure
- LOED.05p
- G. G. Zegrya,
V. P. Evtikhiev, E. Yu. Kotelnikov,
I. V. Kudryashov and A. S. Shkolnik
Basic physical processes which influence on the maximal optical power of
semiconductor laser
- NC.09p
- C. Díaz-Guerra,
V. G. Golubev, D. A. Kurdyukov,
A. B. Pevtsov, J. Piqueras and M. V. Zamoryanskaya
Scanning tunneling spectroscopy study of three-dimensional nanoscale silicon
and platinum assemblies in an opal matrix
- NC.10p
- S. Gómez-Moñivas,
L. S. Froufe, J. Sáenz, R. Carminati and
J. J. Greffet
Theory of electrostatic probe microscopy: a simple perturbative approach
- NC.11p
- M. F. Kokorev,
N. A. Maleev, D. V. Pakhnin, A. E. Zhukov and
V. M. Ustinov
Computational and experimental studies on strain induced effects in
InGaAs/GaAs HFET structure using C-V profiling
- NC.12p
- Yu. A. Mamaev, Yu. P. Yashin,
A. V. Subashiev, A. N. Ambrajei and
A. V. Rochansky
Polarized elecrton photoemission studies of spin relaxation in thin GaAs
epitaxial films
- NC.13p
- A. M. Mintairov,
P. A. Blagnov, J. L. Merz, V. M. Ustinov
and A. S. Vlasov
Vibrational study of nitrogen incorporation in InGaAsN alloys
- NC.14p
- D. A. Vasukov,
V. V. Chaldyshev, A. A. Suvorova,
V. V. Preobrazhenskii, M. A. Putyato and
B. R. Semyagin
HRXRD and TEM studies of cluster formation in LT GaAs
- NC.15p
- V. I. Zubkov
and A. V. Solomonov
Direct observation of two-level electronic emission from QDs InAs/GaAs
by means of C-V and admittance spectroscopy
- ND.05p
- V. Larkin,
P. A. Houston, G. Hill, S. Morozov,
D. Ivanov, I. Larkin, J. J. Jefferson and
Yu. Dubrovskii
New quantum wire field effect transistor
- ND.06p
- E. A. Poltoratsky
and G. S. Rychkov
Dynamical nature of peculiarities of RTD static V–I characteristic
- ND.07p
- V. G. Popov,
Yu. V. Dubrovskii, S. V. Dubonos, L. Eaves,
M. Henini and G. Hill
Unmonotonous variation of oscillation threshold with in-plane magnetic
field in resonant-tunneling diode
- OAN.04p
- P. G. Baranov,
N. G. Romanov, V. S. Vikhnin and V. A. Khramtsov
Suppression of the Jahn-Teller effect in nanoparticles: AgCl nanocrystals
embedded in KCl matrix
- OAN.05p
- F. J. Espinoza-Beltrán,
L. L. Díaz-Flores, J. Morales-Hernández,
J. M. Yáñez-Limón, F. Rodríguez-Melgarejo,
Y. V. Vorobiev and J. González-Hernández
Silicon nanoclusters embedded in SiO2 studied by Raman scattering
- OAN.06p
- R. V. Parfeniev, D. V. Shamshur,
A. V. Chernyaev, A. V. Fokin and S. G. Romanov
Penetration of a magnetic field in a regular indium wireframe
- OAN.07p
- T. S. Perova,
J. K. Vij, E. V. Astrova, A. G. Tkachenko
and O. A. Usov
IR absorption spectra of liquid crystals confined in the channels of
macroporous silicon
- OAN.08p
- N. Taghavinia,
G. Lerondel, H. Makino, A. Yamamoto, T. Yao,
Y. Kawazoe and T. Goto
Zn2SiO4:Mn2+ nano-particles grown in porous silicon
- OAN.09p
- D. A. Zakheim,
I. V. Rozhansky, I. P. Smirnova and S. A. Gurevich
Field effect in thin granulated metal films
- QC.04p
- L. Fedichkin
and M. Yanchenko
Effect of Coulomb interaction on GaAs quantum computer performance
- SRPN.06p
- I. E. Kozin,
V. G. Davydov, I. V. Ignatiev, A. Kavokin, K. Kavokin,
M. Sugisaki and Y. Masumoto
Spin quantum beats of hot trion in quantum dots
- TN.05p
- N. S. Averkiev,
L. E. Golub, S. A. Tarasenko and M. Willander
Transition from several to one conductor channel induced by intersubband
scattering in 2D weak localization
- TN.06p
- B. A. Aronzon,
D. A. Bakaushin, N. K. Chumakov, A. B. Davydov
and A. S. Vedeneev
Disordered quasi-2d semiconductor structures: percolation, non-coherent
mesoscopics, and conductance quantization
- TN.07p
- S. M. Badalyan and
F. M. Peeters
Edge states and their transport in a quantum wire exposed to a non-homogeneous
magnetic field
- TN.08p
- P. Kleinert and
V. V. Bryksin
Nonlinear transport in superlattices under quantizing magnetic fields
- TN.09p
- W. Kraak, N. Ya. Minina,
A. M. Savin, A. A. Ilyevsky and I. V. Berman
Persistent photoconductivity in p-type
Al0.5Ga0.5As/GaAs/ Al0.5Ga0.5As
heterostructures
- TN.10p
- G. M. Mikhailov,
I. V. Malikov, A. V. Chernykh, L. A. Fomin,
P. Joyez, H. Pothier, D. Esteve and E. Olsson
Normal-to-plane magnetoresistance of single crystalline refractory metal
nanostructures
- TN.11p
- V. A. Sablikov and
Ya. Gindikin
Dynamic susceptibility of 1D conductors: the short-range electron correlation
effect
- TN.12p
- I. P. Zvyagin
and R. Keiper
On the conduction mechanism in granular materials
- TP.03p
- Yu. N. Khanin,
E. E. Vdovin and Yu. V. Dubrovskii
Resonant tunnelling via states of the X-related donors located at different
atomic layer in AlAs barrier
- TP.04p
- V. A. Krupenin,
A. B. Zorin, D. E. Presnov, M. N. Savvateev
and J. Niemeyer
The new approach to the single-electron electrometer design
- TP.05p
- E. E. Takhtamirov and
V. A. Volkov
Coulomb interaction of quasi-2D magnetoplasmons
- WBGN.04p
- A. G. Kolmakov, N. M. Shmidt,
V. V. Emtsev, A. D. Kryzhanovsky, W. V. Lundin,
D. S. Poloskin, V. V. Ratnikov, A. N. Titkov,
A. S. Usikov and E. E. Zavarin
Correlation of mosaic structure peculiarities with electric characteristics
and surface multifractal parameters for GaN epitaxial layers
- WBGN.05p
- V. I. Sankin and
P. P. Shkrebiy
The Bloch oscillations and mobile electrical domains in 6H-SiC natural superlattice
- WBGN.06p
- T. V. Shubina, M. G. Tkachman,
A. A. Toropov, A. I. Karlik, S. V. Ivanov,
P. S. Kop'ev, T. Paskova and B. Monemar
Dissimilarity between cleaved edge and surface regions of GaN (0001) epitaxial
layers studied by spatially-resolved photoluminescence and reflectivity
- WBGN.07p
- H. Ünlü
Modeling of band offsets in GaN based heterostructures
- WBGN.08p
- V. Yu. Davydov,
A. A. Klochikhin, I. E. Kozin, I. N. Goncharuk,
A. N. Smirnov, R. N. Kyutt, M. P. Scheglov,
A. V. Sakharov, V. V. Tretyakov, A. V. Ankudinov,
M. S. Dunaevskii, W. V. Lundin, E. E. Zavarin
and A. S. Usikov
Raman studies of acoustical phonons in strained hexagonal GaN/AlGaN
superlattices
- Chair: V. B. Timofeev
- SRPN.01i
- X. Marie
A. Jbeli, M. Paillard, T. Amand and J. M. Gérard
Spin coherence in semiconductor nanostructures
- SRPN.02i
- V. L. Korenev,
I. A. Merkulov, D. Gammon, Al. L. Efros,
T. A. Kennedy, M. Rosen, D. S. Katzer and
S. W. Brown
Suppression of Overhauser effect in the exciton-nuclear spin system of GaAs
quantum dot
- SRPN.03
- Ya. V. Terent'ev,
A. A. Toropov, S. V. Sorokin, A. V. Lebedev,
S. V. Ivanov, P. S. Kop'ev, I. Buyanova,
W. M. Chen and B. Monemar
Injection of spin-polarized carriers from a ZnMnSe/CdSe semimagnetic
superlattice into a non-magnetic ZnCdSe quantum well
- SRPN.04
- Yu. K. Dolgikh,
S. A. Eliseev, I. Ya Gerlovin,
V. V. Ovsyankin, Yu. P. Efimov, I. V. Ignatev,
I. E. Kozin, V. V. Petrov and Y. Masumoto
Spin dynamics of excitons in GaAs/AlGaAs superlattices in a magnetic field
- SRPN.05
- I. A. Yugova,
V. G. Davydov, I. Ya. Gerlovin, I. V. Ignatiev,
I. E. Kozin, M. Sugisaki and Y. Masumoto
Spin quantum beats in InP quantum dots in a magnetic field
- Chair: I. A. Merkulov
- QC.01
- D. V Averin
and V. J. Goldman
Quantum computation with FQHE quasiparticles
- QC.02
- A. A. Larionov,
L. E. Fedichkin and K. A. Valiev
Silicon-based NMR quantum computer using single electron
- QC.03
- A. N. Korotkov
Possible experiment on quantum Bayes theorem
- Chair: S. A. Gurevich
- OAN.01
- D. Kovalev,
V. Yu. Timoshenko, L. Golovan, E. Gross,
N. Künzner, G. Polisski, J. Diener, L. Kuznetsova,
D. A. Sidorov-Biryukov, A. B. Fedotov,
A. M. Zheltikov, P. K. Kashkarov and F. Koch
Birefringent nanostructured silicon: new promising material for linear and
nonlinear optics
- OAN.02
- N. Künzner,
J. Diener, D. Kovalev, G. Polisski, F. Koch,
Al. L. Efros and M. Rosen
Efficient photoluminescence upconversion in porous Si
- OAN.03
- S. N. Roumiantsev,
R. Vajtai, N. Pala, B. Q. Wei, M. S. Shur,
L. B. Kish and P. M. Ajayan
Noise properties of iron-filled carbon nanotubes
- Chair: R. Tsu
- ND.01i
- M. Willander,
M. Y. A. Yousif and O. Nur
Nanostructure effects in Si-MOSFETs
- ND.02
- I. Shorubalko,
P. Omling, L. Samuelson, W. Seifert, A. M. Song
and H. Zirath
Room-temperature operation of GaInAs/InP based ballistic rectifiers at
frequencies up to 50 GHz
- ND.03
- V. G. Mokerov,
Yu. V. Fedorov, L. E. Velikovski, M. Yu. Scherbakova
New quantum dot transistor
- ND.04
- I. Maximov,
R. Lewén, L. Samuelson, I. Shorubalko,
L. Thylén and H. Xu
Fabrication and non-linear measurements of a GaInAs/InP electron waveguide
T-branch switch
- Chair: V. A. Volkov
- TN.01
- A. L. Efros,
M. A. Zudov, I. V. Ponomarev, R. R. Du,
J. A. Simmons and J. L. Reno
New class of magnetoresistance oscillations: interaction of a two-dimensional
electron gas with leaky interface phonons
- TN.02
- K.-F. Berggren,
K. N. Pichugin, A. F. Sadreev and A. A. Starikov
Chaos in nodal points and streamlines in ballistic electron transport
through quantum dots
- TN.03
- K. Pozhela, J. P. Pozhela
and V. Juciene
Large increase of electron mobility in a modulation-doped AlGaAs/GaAs/AlGaAs
quantum well with an inserted thin AlAs barrier
- TN.04
- P. I. Biryulin,
A. A. Gorbatsevich and Yu. V. Kopaev
Analog of the Gunn effect in heterostructure with two tunnel-coupled quantum
well
- Chair: V. P. Evtikhiev
- LOED.01
- A. A. Belyanin,
V. V. Kocharovsky, Vl. V. Kocharovsky and D. S. Pestov,
One- and two-colour superradiant lasing in magnetized quantum-well
heterostructures
- LOED.02
- A. P. Vasil'ev,
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, I. L. Krestnikov,
V. M. Ustinov, N. N. Ledentsov and Zh. I. Alferov
A comparative study of QD and nitrogen - based 1.3 µm VCSELs.
- LOED.03
- V. V. Kapaev,
Yu. V. Kopaev and N. V. Kornyakov
Kinetic processes in unipolar semiconductor lasers on asymmetric quantum wells
- Chair: E. L. Ivchenko
- EN.01i
- J. T. Devreese
Enhanced probabilities of phonon-assisted optical transitions in
semiconductor quantum dots
- EN.02
N. G. Romanov and
P. G. Baranov
Fine structure of excitons and e-h pairs in GaAs/AlAs superlattices at the
X-Gamma crossover
- EN.03
- A. Reznitsky, A. Klochikhin,
L. Tenishev, S. Permogorov S. Sorokin, S. Ivanov,
W. Lundin, A. Usikov, E. Kurtz, H. Kalt and C. Klingshirn
Localized excitons in random and partly phase separated solid solutions:
evidence of fractal structure of islands
- EN.04
- N. N. Sibeldin, M. L. Skorikov
and V. A. Tsvetkov
Effect of additional illumination on the kinetics of exciton complex formation
in the quantum wells of undoped GaAs/AlGaAs structures
- Chair: Yu. V. Dubrovskii
- 2DEG.01
- J. Bergli
and Y. M. Galperin
Nonlinear absorption of surface acoustic waves by composite fermions
- 2DEG.02
- I. L. Drichko,
A. M. Diakonov, Yu. M. Galperin, A. V. Patsekin,
I. Yu. Smirnov and A. I. Toropov
delta-layer quenched high-frequency conductivity in GaAs/AlGaAs
heterostructures: Acoustical studies
- 2DEG.03
- S. Pedersen,
G. R. Kofod, J. C. Hollingbery, C. B. Sörensen
and P. E. Lindelof
Dilation of the giant vortex state in a mesoscopic superconducting loop
- Chair: Zh. I. Alferov
- CS.01i
- L. V. Keldysh
Dynamic Stark effect for excitons
- CS.02i
- R. A. Suris and
I A. Dmitriev
Bolch oscillations in 2D and 3D quantum dot superlattices
- CS.03i
- R. Tsu
Challenges in nanoelectronics
- AIXTRON Young Scientist Award Ceremony
- Zh. I. Alferov
Closing remarks
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