AIXTRON Young Scientist Award

In 1999, the Symposium Programme Committee and the Board of AIXTRON AG (Germany) established a special award to honour a young scientist whowill present at the Symposium the best paper in the field of solid statenanostructures. The award comprises a diploma and a $500 reward sponsored by AIXTRON.

The AIXTRON Young Scientist Award recipients are:
1999 Alexey R. Kovsh, Ioffe Institute, Russia.
2000 Thomas Gruber, Physikalisches Institut Universität für Würzburg Am Hubland, Germany

A 2001 awardee was selected by the Award Committee from seven nominees proposed by the Programme Committee:

1. M. P. Cannaerts et al., Katholieke Universiteit Leuven, Belgium
   Scanning Joule expansion microscopy as a tool for studying local heating phenomena
   
2. N. Künzner et al., Physik Department E16, Technische Universität München, Germany
   Efficient photoluminescence upconversion in porous Si
3. C. Möller et al., Heinrich-Hertz Institut für Nachrichtentechnik, Berlin, Germany
   Development of 1300 nm GaAs-based microcavity light-emitting diodes
4. J. Muszalski et al., Institute of Electron Technology, Warsaw, Poland
   InGaAs resonant cavity light emitting diodes (RC LEDs)
   
5. I. S. Shorubalko et al., Department of Solid State Physics, Lund University, Lund, Sweden
   Room-temperature operation of GaInAs/InP based ballistic rectifiers at frequencies up to 50 GHz
   
6. M. L. Skorikov et al., Lebedev Physical Institute, Moscow, Russia
   Effect of additional illumination on the kinetics of exciton complex formation in the quantum wells of undoped GaAs/AlGaAs structures
   
7. S. A. Tarasenko et al., Ioffe Institute, St Petersburg, Russia
   Transition from several to one conductor channel induced by intersubband scattering in 2D weak localization
   

On Friday, June 22, 2001 at the Award Ceremony the Chair of Award Committee, Prof. Zh. Alferov, announced the 2001 Award recipient—Mr. Ivan Shorubalko.

Mr. Ivan Shorubalko Department of Solid State Physics Lund University Lund, Sweden E-mail: Ivan.Shorubalko@ftf.lth.se Education: 1992 finished Gulbene secondary school, Latvia September 1992-June 1995 University of Latvia, Faculty of Physics and Mathematics September 1995-July 1996 The Netherlands, University of Groningen, Faculty of Mathematics and Physics September 1996-June 1997 University of Latvia, Faculty of Physics and Mathematics Diploma: Bachelor.s degree in physics 1997 Master study in solid state physics at University of Latvia, Faculty of Physics and Mathematics January 1998-June 1998 Sweden, Lund University, department of Solid State Physics. Master diploma work: Masters degree in physics September 1999 Sweden, Lund University, department of Solid State Physics, PhD student

Experience: Since September 1998 Post-graduate study in the group of electron transport physics, Department of Solid State Physics, Lund University, Sweden. January 1998-June 1998 Master theses work, Department of Solid State Physics, Lund University, Sweden. Title: "Fabrication and electron transport properties of GaInAs/InP based quantum wires". Prof. Per Omling was a supervisor for this work. September 1996-December 1997 Laboratory assistant, Institute of Solid State Physics, Physics and Mathematics department, University of Latvia. March 1996-July 1996 Project work in the group of Physics of Thin Layers, Faculty of Mathematics and Physics, University of Groningen, The Netherlands. Prof. T. M. Klapwijk was a supervisor of this work. The work was used for bachelor theses. October 1994-August 1995 Laboratory assistant, Institute of Solid State Physics, Physics and Mathematics department, University of Latvia. Current Research: Fabrication and electron transport properties of GaInAs/InP based, novel, ballistic nanodevices. Currently nonlinear electron transport behavior of the so called ballistic rectifiers and three terminal ballistic junctions (T-branches) has been investigated. The working principles of these devices are completely different from the conventional devices used in todays electronics, which gives functionality of these novel devices at very high frequencies. Small size (nanoscale) of these devices makes it possible to observe ballistic phenomena up to room temperature. Therefore, these novel ballistic nanodevices are very promising candidates for the building blocks of the future electronic circuits. Experimental work: Optical and electron beam lithography, wet chemical etching, inspections in scanning electron microscope and atomic force microscope, electrical measurements.