8th International Symposium Nanostructures: Physics and Technology
St Petersburg, Russia, 19–23 June 2000

Proceedings

Ioffe Institute, 2000, 568 pages, 359 Illustrations.
Softbound.
ISBN 5-93634-002-3

Printed in Russian Federation

By tradition the Proceedings of the Symposium is published before the beginning of the meeting.

This volume was composed at the Information Services and Publishing Department of the Ioffe Institute from electronic files submitted by the authors. When necessary these files were converted into the Symposium LaTeX2e style without any text revisions. Only minor technical corrections were made by the composers.

 Contents

  • Invited talks:
    • Collective behaviour of the interwell excitons in biased GaAs/AlGaAs double quantum wells (V. B. Timofeev et al.).
    • InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices (H. Riechert et al.).
    • Theory of threshold characteristics of quantum dot lasers (L. V. Asryan ). and R. A. Suris ).
    • Physics of quantum well and quantum dot infrared photodetectors (V. Ryzhii ).
    • Resonant states and terahertz generation in strained semiconductors and semiconductors nanostructures (I. N. Yassievich et al.).
    • Light confinement in quantum dots (S. A. Maksimenko et al.).
    • Spectroscopy of inhomogeneous strain in silicon-based quantum dots (A. Zaslavsky et al.).
    • Room temperature single electron devices by STM/AFM nano-oxidation process (K. Matsumoto ).
    • Phase coherent electron transport in open quantum dots and quantum dot arrays (J. P. Bird et al.).
    • Recent results in quantum cascade lasers and applications (C. Gmachl et al.).
    • Long wavelength quantum dot lasers on GaAs substrates (V. M. Ustinov et al.).
  • About 140 contributed papers.
  • Author Index.