 Final Programme
Last updated April 26, 2000
- Chair: Zh. I. Alferov
-
- Zh. I. Alferov
Opening remarks
- OS.01i
- Y. Arakawa
Single quantum dot spectroscopy by SNOM
- OS.02i
- V. B. Timofeev, A. V. Larionov, J. M. Hvam,
and C. B. Soerensen
Collective behavior of the interwell excitons in biased GaAs/AlGaAs double quantum wells
- Chair: P. S. Kop'ev
- LOED.01i
- H. Riechert,
A. Yu. Egorov, D. Livshits, B. Borchert and S. Illek
InGaAsN/GaAs heterostructures for long-wavelength light-emitting diodes
- LOED.02i
- L. V. Asryan and R. A. Suris
Theory of threshold characteristics of quantum dot lasers
- LOED.03
- E. G. Golikova,
V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskiy
N. A. Pikhtin, Yu. A. Ryaboshtan, G. V. Skrynnikov,
I. S. Tarasov and Zh. I. Alferov
Properties of wide mesastripe InGaAsP heterolasers
- LOED.04
- A.V. Platonov,V. P. Kochereshko, E. L. Ivchenko, D. R. Yakovlev, G. Reuscher, W. Ossau, A. Waag, and G. Landwehr
Anisotropy of light emission from the surface LED based on the type-II ZnSe/BeTe heterojunction
- Chair: V. B. Timofeev
- 2DEG.01
- I. D. Ivanov, E. Takhtamirov, Yu. V. Dubrovskii, V. A. Volkov, E. E. Vdovin,
L. Eaves, P. C. Main, M. Henini, D. K. Maude, J. -C. Portal, J. C. Maan, and G. Hill
Interaction between Landau levels of different two-dimensional subbands GaAs
- 2DEG.02
- E. E. Takhtamirov, and V. A. Volkov
2D symmetry and pinning of quantum-Hall "strip phase"
- 2DEG.03
- B. A. Andreev, I. V. Erofeeva, V. I. Gavrilenko,
A. L. Korotkov, A. N. Yablonskiy, Y. Kawano, and S. Komiyama
Cyclotron resonance quantum Hall effect detector
- 2DEG.04
- Yu. M. Galperin, I. L. Drichko, A. M. Diakonov,
I. Yu. Smirnov, and A. I. Toropov
Localization length determination for the two-dimensional electrons in the
delta-doped GaAs/AlGaAs heterostructures from acoustical studies of the
quantum Hall regime
- Chair: A. A. Andronov
- FIR.01i
- V. Ryzhii
Physics of quantum well and quantum dot infrared photodectors
- FIR.02i
- I. N. Yassievich,
M. S. Kagan, and K. A. Chao
Resonant states and terahertz generation in strained semiconductors and
semiconductor nanostructures
- FIR.03
- I. V. Altukhov, M. S. Kagan, V. P. Sinis,
S. G. Thomas, K. L. Wang, K. -A. Chao, A. Blom, M. O. Odnoblyudov and I. N. Yassievich
Terahertz emission of SiGe/Si quantum wells doped with shallow acceptors
- FIR.04
- L. E. Vorobjev, G. G. Zegrya, and D. A. Firsov
Midinfrared range laser based on intersubband transitions and resonant Auger
processes in quantum wells
- Chair: E. R. Weber
- NT.01i
- U. Gösele, and M. Alexe
Fabrication and switching of nanostructured ferroelectric thin films
- NT.02
- V. Ya. Prinz, V. A. Seleznev, L. L. Sveshnikova,
and J. A. Badmaeva
Precise micro- and nanotubes formed by scrolling Langmuir-Blodgett/GaAs/InGaAs films
- NT.03
- O. P. Pchelyakov,
L. V. Sokolov, M. M. Moiseeva and N. S. Sokolov
MBE grown Ge nanostructures on CaF2/Si (111)
- Chair: V. I. Ryzhii
- QW/SL.01i
- Y. Shiraki
Luminescence enhancement in indirect band-gap semiconductors with quantum
confinement structures
- QW/SL.02
- K. L. Vodopyanov,
G. B. Serapiglia, E. Paspalakis, C. Sirtori and C. C. Phillips
Observation of electromagnetically induced transparency in a three-subband
quantum well system
- QW/SL.03
- S. A. Tarasenko, A. A. Kiselev, E. L. Ivchenko,
A. Dinger, M. Baldauf, K. Klingshirn and H. Kalt
Non-monotonous temperature dependence of the spectral maximum of photoluminescence
in CdS/ZnSe superlattices
- QW/SL.04
- V. Ya. Aleshkin, A. A. Andronov, A. V. Antonov,
V. I. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, D. G. Revin, B. N. Zvonkov and E. A. Uskova
Experimental determination of the energy distribution function of hot holes in
InGaAs/GaAs quantum well heterostructure
- QW/SL.05
- K. W. Sun, H. Y. Chang, C. M. Wang,
T. S. Song, S. Y. Wang and C. P. Lee
Raman and hot electron-nuetral acceptor luminescence studies of electron-optical
phonon interactions in GaAs/AlxGa1-xAs wuantum wells
- Chair: Y. Arakawa
- WBGN.01i
- A. Hoffmann
GaN-based heterostructures
- WBGN.02
- A. D. Andreev, and
E. P. O'Reilly
Built-in electric fields and electronic structure of GaN/AlN QDs
- WBGN.03
- S. A. Brown,
R. J. Reeves, R. Cheung, C. Kirchner and M. Kamp
Argon plasma etching of galium nitride: spectroscopic surprises
- WBGN.04
- H. Protzmann, M. Luenenbuerger, J. Söllner,
M. Heuken, and H. Jürgensen
GaN uniformity control on multiple 3 inch wafer grown in Planetary reactors®
- Chair: M. S. Skolnick
- MPC.01i
- S. A. Maksimenko, G. Ya. Slepyan, N. N. Ledentsov, V. P. Kalosha, A. Hoffmann,
and D. Bimberg
Light confinement in quantum dots
- MPC.02
- Clivia M. Sotomayor Torres,
Torsten Maka, Manfred Müller, Rudolf Zentel and Sergei G. Romanov
Thin film photonic crystals
- MPC.03
- Misha Boroditsky,
Rutger Vrijen, Thomas F. Krauss, Roberto Coccioli,
Raj Bhat and Eli Yablonovich
Enhancement and extraction of spontaneous emission from 2-d thin film photonic crystals
- MPC.04
- A. M. Mintairov,
O. V. Kovalenkov, J. L. Merz, S. V. Osinski,
J. P. Reynolds, I. S. Tarasov, D. A. Vinokurov
and A. S. Vlasov
Apparent microcavity effect in the near-field photoluminescence of a single
quantum dot
- MPC.05
- M. E. Gaevski,
S. O. Kognovitskii, S. G. Konnikov,
A. V. Nashchekin, S. I. Nesterov, and Yu. M. Zadiranov
Two-dimensional photonic crystal fabrication using fullerene films
- Chair: E. L. Ivchenko
- EN.01
- G. V. Astakhov,
V. P. Kochereshko, D. R. Yakovlev, R. A. Suris,
W. Ossau, G. Landwehr, T. Wojtowicz, G. Karczewski and
J. Kossut
Spectroscopy of negatively charged excitons interacting with 2DEG in CdTe/CdMgTe QW's
- EN.02
- T. Vanhoucke, M. Hayne, V. V. Moshchalkov, and
M. Henini
Energy level diagram of X- in high magnetic fields
- EN.03
- P. G. Baranov, N. G. Romanov, A. Hofstaetter,
B. K. Meyer, A. Scharmann, W. von Förster, F. J. Ahlers and
K. Pierz
Regular trends in fine structure and localization of excitons in type II GaAs/AlAs
superlattices with a gradient of composition
- 2DEG.05p
- N. S. Averkiev,
L. E. Golub and S. A. Tarasenko
Temperature emerging of combination frequencies in quasi-2D Shubnikov–de Haas
effect
- 2DEG.06p
- N. S. Averkiev,
L. E. Golub and M. Willander
Electron spin relaxation in zinc-blende heterostructures
- 2DEG.07p
- G. M. Minkov,
A. V. Germanenko, O. E. Rut, O. I. Khrykin,
V. I. Shashkin and V. M. Danil'tsev
Low field negative magnetoresistance in double layer structures
- EN.04p
- G. V. Astakhov,
V. P. Kochereshko, D. R. Yakovlev, R. A. Suris,
W. Ossau, J. Nürnberger, W. Faschinger and G. Landwehr
Reflectivity studies of trion X- and exciton X states in
ZnSe/(Zn,Mg)(S,Se) QWs
- EN.05p
- V. V. Kapaev,
Yu. V. Kopaev and A. E. Tyurin
Dimensionality transformation of exciton state in quantum well with
asymmetrical barriers
- EN.06p
- A. Klochikhin, A. Reznitsky,
L. Tenishev, S. Permogorov, S. Verbin, S. Ivanov,
S. Sorokin, R. Seisyan and C. Klingshirn
Fluctuation-trapped exciton states in 2D-semiconductor solid solutions
- EN.07p
- V. G. Litovchenko,
D. V. Korbutyak, S. G. Krylyuk, H. T. Grahn
and K. Ploog
Time-resolved studies of exciton recombination in direct-gap GaAs/AlAs
superlattices
- EN.08p
- I. A. Yugova,
V. G. Davydov, Yu. K. Dolgikh, Yu. P. Efimov,
S. A. Eliseev, A. V. Fedorov, I. Ya. Gerlovin,
I. V. Ignatiev, I. E. Kozin, V. V. Petrov,
V. V. Ovsyankin, H.-W. Ren, K. Nishi and Y. Masumoto
Spectroscopy of the high energy quantum confined excitonic states in the
thick GaAs quantum wells
- FIR.06p
- L. E. Vorobjev,
S. N. Danilov, I. E. Titkov, D. A. Firsov,
V. A. Shalygin, A. E. Zhukov, A. R. Kovsh,
V. M. Ustinov, V. Ya. Aleshkin, B. A. Andreev,
A. A. Andronov and E. V. Demidov
Optical absorption and birefringence in GaAs/AlAs MQW structures due to
intersubband electron transitions
- GPLDS.01p
- Yu. G. Fokin,
T. V. Misuryaev, T. V. Murzina, V .M. Fridkin,
S. P. Palto, L. M. Blinov and O. A. Aktsipetrov
Ferroelectric-paraelectric phase transitions in P(VDF-TrFE) Langmuir–Blodgett
films studied by optical second harmonic generation
- GPLDS.02p
- I. P. Ipatova,
O. P. Chikalova-Luzina, and K. Hess
Anharmonic lifetime of H and D on the Si surface
- GPLDS.03p
- I. Rumyantsev,
N. H. Kwong, R. Takayama and R. Binder
Comparison of phenomenological models with a microscopic theory for
semiconductor optical nonlinearities
- LOED.05p
- Yu. A. Aleshchenko,
V. V. Kapaev, Yu. V. Kopaev and N. V. Kornyakov
Unipolar semiconductor lasers on asymmetric quantum wells
- LOED.06p
- N. Yu. Gordeev,
L. Ya. Karachinsky, V. I. Kopchatov, P. S. Kop'ev,
I. I. Novikov and S. V. Zaitsev
Injection laser threshold from the standpoint of collective resonance
- LOED.07p
- V. I. Kopchatov,
N. Yu. Gordeev, N. D. Il'inskaja, S. V. Ivanov,
P. S. Kop'ev, H.-J. Lugauer, G. Reuscher, A. Waag
and G. Landwehr
Electroluminescence study of green Be-contained II–VI lasers
- LOED.08p
- E. Yu .Kotelnikov,
A. A. Katsnelson, D. A. Livshits, W. Richter,
V. P. Evtikhiev, I. S. Tarasov and Zh. I. Alferov
The power of catastrophic optical mirror degradation in InGaAs/AlGaAs/GaAs
QW laser diodes
- LOED.09p
- Yu. A. Mityagin,
V. N. Murzin, I. P. Kazakov, V. A. Chuenkov,
A. L. Karuzskii, A. V. Perestoronin,
A. A. Pishchulin and L. Yu. Shchurova
Intersubband population inversion under resonance tunneling in wide quantum
well structures
- LOED.10p
- A. E. Zhukov,
A. R. Kovsh, S. S. Mikhrin, N. A. Maleev,
V. A. Odnoblyudov, V. M. Ustinov, Yu. M. Shernyakov,
E. Yu. Kondat'eva, D. A. Livshits, I. S. Tarasov,
N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov
and D. Bimberg
Power conversion efficiency in a quantum dot based diode laser
- LOED.11p
- G. S. Sokolovskii,
E. U. Rafailov, A. G. Deryagin, V. I. Kuchinskii,
D. J. L. Birkin and W. Sibbett
Quantum well DFB laser having a curved grating structure
- MPC.06p
- R. A. Abram,
S. Brand, M. A. Kaliteevski, T. F. Krauss,
R. DeLa Rue and P. Millar
Two-dimensional Penrose-tiled photonic quasicrystals: is there a pure
photonic band gap?
- MPC.07p
- V. A. Kosobukin
and A. V. Sel'kin
Elastic scattering of light from fluctuating exciton polarization of a
quantum well in a semiconductor microcavity
- OAN.1p
- P. N. Brunkov,
V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova,
N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii,
M. A. Putyato and B. R. Semyagin
Carrier accumulation due to insertion of nanoscale As clusters into n- and
p-type GaAs
- OAN.02p
- V. Yu. Davydov,
V. G. Golubev, N. F. Kartenko, D. A. Kurdyukov,
A. B. Pevtsov, S. M. Samoilovich and N. V. Sharenkova
Fabrication and structural studies of ``opal–III nitrides'' nanocomposites
- OAN.03p
- A. V. Kolobov,
H. Oyanagi, H. Akinaga, T. K. Zvonaryova and
V. I. Ivanov-Omskii
Copper and cobalt nanoclusters embedded in hydrogenated amorphous carbon:
an X-ray absorption study
- OAN.04p
- D. V. Ovchinnikov,
A. A. Bukharaev and R. Wiesendanger
Magnetic force microscopy of Fe nanoparticles buried into SiO2
- OAN.05p
- N. G. Romanov,
R. A. Babunts, A. G. Badalyan, V. A. Khramtsov
and P. G. Baranov
Oriented silver halide nanocrystals embedded in crystalline alkali halide
matrix as studied by EPR and ODMR
- OAN.06p
- D. V. Shamshur,
A. V. Chernyaev, A. V. Fokin and S. G. Romanov
Critical magnetic field in regularly nanostructured indium
- OAN.07p
- D. I. Tetelbaum,
O. N. Gorshkov, S. A. Trushin, D. G. Revin,
D. M. Gaponova and W. Eckstein
The enhancement of luminescence in ion implanted Si quantum dots in SiO2
matrix by means of dose aligment and doping
- WBGN.05p
- V. Yu. Davydov,
A. A. Klochikchin, S. V. Goupalov, I. N. Goncharuk,
A. N. Smirnov, W. V. Lundin, A. S. Usikov,
E. E. Zavarin, A. V. Sakharov, M. V. Baidakova,
J. Stemmer, H. Klausing, D. Mistele and O. Semchinova
Optical phonons in hexagonal GaN/AlxGa1-xN multilayered structures
- WBGN.06p
- Yu. E. Kitaev,
M. F. Kokorev and P. Tronc
Symmetry-induced effects on the band structure of wurzite III–V nitride-based
quantum wells
- WBGN.07p
- A. V. Sakharov,
W. V. Lundin, I. L. Krestnikov, E. E. Zavarin,
A. S. Usikov, A. F. Tsatsul'nikov, N. N. Ledentsov,
A. Hoffmann, D. Bimberg and Zh. I. Alferov
Effect of annealing on phase separation in ternary III–N alloys}
- Chair: N. A. Bert
- NC.01
- A. Beyer, O. Leifeld, S. Stutz, E. Müller, and D. Grützmacher
In-situ STM analysis and photolumenescence of C-induced Ge dots
- NC.02
- N. D. Zakharov,
P. Werner, U. Gösele, V. M. Ustinov, G. E. Cirlin,
B. V. Volovik, N. K. Polyakov, V. N. Petrov,
A. Yu. Egorov, N. N. Ledentsov, Zh. I. Alferov, R. Heitz and D. Bimberg
Optical Properties and structure of Si/InAs/Si layers grown by MBE on Si substrate
- NC.03
- V. Ya. Aleshkin, A. V. Biryukov, S. V. Gaponov,
V. M. Danil'tsev, V. L. Mironov, A. V. Murel and V. I. Shashkin
STM investigation of a strong electric field effect on local photocurrent
spectra in InAs/GaAs quantum dot heterostructures
- NC.04
- N. S. Maslova,
S. I. Oreshkin, V. I. Panov and S. V. Savinov
Tunneling spectroscopy of nonequilibrium interacting impurity states on
semiconductor surface
- Chair: A. G. Hoffmann
- NT.04
- S. V. Ivanov, G. Reuscher,
T. Gruber, T. Muck, V. Wagner, J. Geurts, A. Waag, G. Landwehr,
T. V. Shubina, N. A. Sadchikov, A. A. Toropov
and P. S. Kop'ev
Novel Cd(Se,Te)/BeTe nanostructures: fabrication by molecular beam epitaxy and properties
- NT.05
- S. V. Ivanov,
O. V. Nekrutkina, V. A. Kaigorodov,
T. V. Shubina, P. S. Kop'ev, G. Reuscher,
V. Wagner, J. Geurts, A. Waag and G. Landwehr
Optical and structural properties of BeCdSe/ZnSe QW heterostructures grown by MBE
- NT.06
- B. N. Zvonkov,
I. A. Karpovich, N. V. Baidus, D. O. Filatov,
S. V. Morozov and Yu. Yu. Gushina
The influence of Bi doping of the InAs/GaAs quantum dots on morphology and
photoelectronic properties of the heterostructures obtained by MOVPE
- NT.07
- S. V. Ivanov,
K. D. Moiseev, A. M. Monakhov,
I. V. Sedova, V. A. Solov'ev, M. P. Mikhailova,
Ya. V. Terentyev, B. Ya. Meltzer, A. A. Toropov,
Yu. P. Yakovlev and P. S. Kop'ev
Electrolumenescence properties of a new asymmetric AlSbAs/InAs/II-VI double
heterostructure grown by MBE
- NC.05p
- A. A. Ejov,
D. A. Muzychenko and V. I. Panov
Local light polarisation mapping and electromagnetic field imaging by SNOM
- NC.06p
- A. A. Fedyanin,
T. V. Dolgova, D. Schuhmacher, G. Marowsky and
O. A. Aktsipetrov
Resonant second-harmonic phase spectroscopy of the buried interfaces of
Column IV semiconductors
- NC.07p
- S. P. Grishechkina,
I. P. Kazakov, V. T. Trofimov, M. V. Valeyko
and N. A. Volchkov
Control of photocurrent relaxation in GaAs/AlGaAs nanostructures
- ND.06p
- S. V. Evstigneev,
A. L. Karuzskii, Yu. A. Mityagin,
A. V. Perestoronin, D. S. Shipitsin and S. S. Shmelev
Multiple-barrier resonant tunneling structures for application in a microwave
generator stabilized by microstrip resonator
- ND.07p
- M. Feiginov
Does the quasibound-state lifetime restrict the high-frequency operation of
resonant-tunneling diodes?
- ND.08p
- I. V. Grekhov,
A. F. Shulekin, S. E. Tyaginov, and M. I. Vexler
Soft breakdown in the bistable MOS tunnel structures
- NT.08p
- A. G. Banshchikov,
R. V. Pisarev, A. A. Rzhevsky, N. S. Sokolov,
Ahsan M. Nazmul and M. Tanaka
Epitaxial growth and characterization of MnAs/Si(111) nanoscale
magnetoelectronic heterostructures
- NT.09p
- N. A. Cherkashin,
N. A. Bert, N. N. Ledentsov, I. V. Kochnev,
V. M. Lantratov and Yu. G. Musikhin
Influence of annealing on the formation of InGaAs quantum dots in GaAs
matrix during metal organic chemical vapor deposition
- NT.10p
- M. V. Chukalina,
V. N. Matveev, V. V. Sirotkin, A. A. Svintsov
and S. I. Zaitsev
Deformation and viscouse flow in nano-imprinting
- NT.11p
- V. N. Jmerik,
V. V. Mamutin, T. V. Shubina, M. G. Tkachman,
V. A. Vekshin, V. V. Ratnikov, A. V. Lebedev,
S. V. Ivanov and P. S. Kop'ev
GaN/Al2O3 epilayers grown by MBE with a controllable
nitrogen plasma composition
- NT.12p
- I. G. Neizvestny,
L. N. Safronov, N. L. Shwartz, Z. Sh. Yanovitskaja
and A. V. Zverev
Monte Carlo simulation of quantum dots formation during heteroepitaxy
- NT.13p
- I. G. Neizvestny,
N. L. Shwartz, Z. Sh. Yanovitskaja and
A. V. Zverev
Simulation of pores sealing during homoepitaxy on Si(111) surface
- NT.14p
- V. A. Shchukin
and A. N. Starodubtsev
Non-linear theory of alloy phase separation in open systems: Kinetic phase
transitions between 1D and 2D structures
- NT.15p
- N. S. Sokolov
and S. M. Suturin
MBE-grown CaF2 nanostructures on Si(100)
- NT.16p
- Ya. V. Terent'ev,
A. A. Toropov, B. Ya. Mel'tser, V. A. Solov'ev,
S. V. Ivanov, P. S. Kop'ev, B. Magnusson and B. Monemar
Photoluminescence studies of InAs/InSb nanostructures grown by MBE
- NT.17p
- B. V. Volovik,
A. R. Kovsh, W. Passenberg, H. Künzel, Yu. G. Musikhin, V. A. Odnoblyudov,
N. N. Ledentsov, D. Bimberg, and V. M. Ustinov
Optical properties of InGaAsN/GaAs quantum well and quantum dot structures
for longwavelength emission
- QW/SL.05p
- L. Fedichkin,
M. Yanchenko and K. A. Valiev
Coherent charge qubits based on GaAs quantum dots with a built-in barrier
- QW/SL.06p
- A. A. Larionov,
L. E. Fedichkin, A. A. Kokin and K. A. Valiev
Nuclear magnetic resonance spectrum of 31P donors in silicon
quantum computer
- QW/SL.06p
- A. P. Boltaev,
N. N. Loiko, M. M. Rzaev and N. N. Sibeldin
External electric field effect on energy level positions in a quantum well
- QW/SL.07p
- G. F. Glinskii,
V. A. Lakisov, A. G. Dolmatov and K. O. Kravchenko
Multiband coupling and electronic structure of short-period (GaAs)n/(AlAs)n (001)
superlattices
- QW/SL.08p
- A. V. Kimel,
V. V. Pavlov, R. V. Pisarev, V. N. Gridnev,
V. P. Evtikhiev, I. V. Kudryashov and Th. Rasing
Dynamical Kerr effect in a quantum-well AlGaAs/GaAs structure under circular
optical excitation
- QW/SL.09p
- P. Kleinert and
V. V. Bryksin
An analytic kinetic approach to Zener interminiband transitions in
superlattices
- QW/SL.10p
- V. I. Kozlovsky,
Yu. G. Sadofyev and V. G. Litvinov
Band alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW structures grown on
GaAs(100) by MBE
- QW/SL.11p
- V. V. Krivolapchuk,
E. S. Moskalenko and A. L. Zhmodikov
A giant shot of radiation intensity of space indirect exciton line
in double quantum wells in GaAs/AlGaAs
- QW/SL.12p
- N. N. Melnik,
Yu. G. Sadofyev, T. N. Zavaritskaya and L. K. Vodop'yanov
Multiphonon relaxation in ZnSe thin films and ZnSe/ZnCdSe superlattice
- QW/SL.13p
- N. A. Nezlobin,
A. S. Polkovnikov and G. G. Zegrya
Theoretical investigation of intraband absorption of electromagnetic
radiation by holes in quantum wells
- QWR/QD.11p
- B. H. Bairamov,
V. A. Voitenko, V. V. Toporov, B. P. Zakharchenya,
M. Henini and A. J. Kent
Acoustical plasma oscillations in photoexcited electron-hole plasma induced in
GaAs layers embedded by InAs quantum dots
- QWR/QD.12p
- A. M. Bychkov,
I. I. Yakymenko and K.-F. Berggren
Spin-dependent electron behaviour in quantum point contacts and dots
- QWR/QD.13p
- V. Davydov,
A. V. Fedorov, I. V. Ignatiev, S. V. Nair,
H.-W. Ren, M. Sugisaki and Y. Masumoto
Observation of quantum beats in photoluminescence of self-assembled quantum
dots
- QWR/QD.14p
- E. B. Dogonkine,
V. N. Golovatch, A. S. Polkovnikov, A. V. Pozdnyakov
and G. G. Zegrya
Theoretical investigation of Auger recombination in spherical quantum dots
- QWR/QD.15p
- V. A. Egorov,
V. N. Petrov, N. K. Polyakov, G. E. Cirlin,
B. V. Volovik, A. E. Zhukov, A. F. Tsatsul'nikov
and V. M. Ustinov
1.3 µm photoluminescence emission from InAs/GaAs quantum dots
multilayer structures
- QWR/QD.16p
- V. A. Gaisin,
Dinh Son Thach, B. S. Kulinkin, B. V. Novikov,
V. N. Petrov, V. M. Ustinov and G. E. Cirlin
Photoluminescence of InAs/GaAs quantum dots under hydrostatic pressure
- QWR/QD.17p
- I. P. Ipatova,
A. Yu. Maslov and O. V. Proshina
The spectral distribution of polaron exciton line in quantum dot
- QWR/QD.18p
- I. A. Karpovich,
B. N. Zvonkov, D. O. Filatov, S. B. Levichev,
N. V. Baidus and S. M. Nekorkin
Photoelectronic properties of InAs/GaAs nanostructures with combined quantum
well and quantum dot layers grown by Metal-Organic Vapor Phase Epitaxy
- QWR/QD.19p
- A. Khitun,
A. Balandin, J. L. Liu and K. L. Wang
Semiconductor quantum dot superlattices for thermoelectric applications
- QWR/QD.20p
- V. A. Kulbachinskii,
V. G. Kytin, R. A. Lunin, A. V. Golikov,
A. V. Demin, B. N. Zvonkov, S. M. Nekorkin and
A. de Visser
Optical properties and hopping conductivity in InAs/GaAs quantum dot
structures
- QWR/QD.21p
- Ant. S. Maksimenko
and G. Ya. Slepyan
Negative differential conductivity in conducting carbon nanotubes
- QWR/QD.22p
- V. M. Osadchii
and V. Ya. Prinz
Charge separation in scrolled heterostructures
- QWR/QD.23p
- Slava V. Rotkin
On depolarisation in 0D systems: Lamb-like level shift
- QWR/QD.24p
- V. G. Talalaev,
B. V. Novikov, S. Yu. Verbin, Dinh Son Thach,
G. Gobsch, R. Goldhahn, N. Stein, A. Golombek,
J. W. Tomm, A. Maassdorf, G. E. Cirlin,
V. N. Petrov and V. M. Ustinov
Size quantization and excited states of associated and isolated InAs quantum
dots
- QWR/QD.25p
- A. A. Toropov,
S. V. Sorokin, K. A. Kuritsyn, S. V. Ivanov,
P. S. Kop'ev, G. Reuscher, A. Waag, M. Wagner,
W. M. Chen and B. Monemar
Magnetooptical studies in CdSe/(Zn,Mn)Se semimagnetic nanostructures
- QWR/QD.26p
- V. V'yurkov and A. Vetrov
Spontaneous spin polarization in a quantum wire
- SBNS.05p
- V. Ya. Aleshkin,
I. V. Erofeeva, V. I. Gavrilenko, D. V. Kozlov
and O. A. Kuznetsov
Resonant acceptors states in Ge/Ge1-xSix MQW
heterostructures
- SBNS.06p
- M. V. Yakunin,
G. A. Alshanskii, Yu. G. Arapov, O. A. Kuznetsov,
V. N. Neverov
Transition from a single- to double-quantum-well magnetotransport
in the p-GeSi/Ge/p-GeSi heterosystem
- TN.04p
- G. M. Mikhailov,
A. V. Chernykh, J. C. Maan, J. G. S. Lok,
A. K. Geim and D. Esteve
High magnetic field dependence of the edge and bulk state electron transport
in single-crystalline tungsten nanostructures
- TN.05p
- V. V. Ponomarenko
Fractional charge in transport through a 1D correlated insulator of finite
length
- TN.06p
- V. A. Sablikov and
S. V. Polyakov
Electron transport in a mesoscopic wire: the charging and exchange interaction
effects
- TP.01p
- V. A. Berezovets,
M. P. Mikhailova, K. D. Moiseev,
R. V. Parfeniev, A. E. Rozov, Yu. P. Yakovlev
and V. I. Nizhankovskii
Quantum magnetotransport in the semimetal channel at the type II broken-gap
GaInAsSb/InAs heterojunction
- TP.02p
- V. G. Popov,
Yu. V. Dubrovskii, K. L. Wang, L. Eaves and
J. C. Maan
Current instabilities in negative differential resistance region of a large
area resonant tunneling diode
- TP.03p
- S. A. Vitusevich, A. Förster,
W. Reetz, H. Lüth, A. E. Belyaev and S. V. Danylyuk
Fine structure of photoresponse spectra in double-barrier resonant tunneling
diode
- Chair: Yu. V. Kopaev
- QWR/QD.01i
- M. Skolnick
Inverted electron-hole alignment in InAs/GaAs self assembled quantum dots
- QWR/QD.02
- I. L. Krestnikov,
N. N. Ledentsov, M. V. Maximov, D. Bimberg, D. A. Bedarev,
I. V. Kochnev, V. M. Lantratov, N. A. Cherkashin,
Yu. G. Musikhin and Zh. I. Alferov
Formation of defect-free InGaAs-GaAs quantum dots for 1.3 µm spectral
range grown by metal-organic chemical vapor deposition
- QWR/QD.03
- E. Lifshitz,
A. Glozman and I. D. Litvin
Optically detected magnetic resonance spectrum of semiconductor quantum dots
- QWR/QD.04
- L. Hansen,
A. Ankudinov, F. Bensing, J. Wagner, G. Ade, P. Hinze,
V. Wagner, J. Geurts and A. Waag
Properties of InAs quantum dots on silicon (001) and (111)
- QWR/QD.05
- A. Baranov, V. Davydov,
A. Fedorov, H.-W. Ren, S. Sugou and Y. Masumoto
Two-pulse coherent population of quantum states in inhomogeneous ensemble
detected by the phonon-assisted resonant luminescence
- Chair: U. Gösele
- SBNS.01i
- A. Zaslavsky, Jun Liu,
B. R. Perkins and L. B. Freund
Spectroscopy of inhomogeneous strain in silicon-based quantum dots
- SBNS.02
- N. V. Vostokov, S. A. Gusev,
Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov,
L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov,
M. Miura, N. Usami and Y. Shiraki
Effect of alloying on growth of GeSi self-assembled islands
- SBNS.03
- A. V. Kolobov,
Y. Maeda, H. Oyanagi, K. Tanaka and Z. Cernosek
Raman scattering from Ge nanocrystals on Si substrates: problems and solutions
- SBNS.04
- A. I. Belogorokhov,
L. I. Belogorokhova, Y. Masumoto, T. Matsumoto
and E. A. Zhukov
The effect od deiterium on the optical properties of free standing porous
silicon layers
- Chair: C. M. Sotomayor Torres
- ND.01i
- K. Matsumoto
Room temperature single electron devices by STM/AFM nano-oxidation process
- ND.03
- Th. Gruber, M. Keim,
R. Fiederling, G. Reuscher, A. Waag, W. Ossau, G. Schmidt
and L. Molenkamp
Semimagnetic resonant tunneling diodes for electron spin manipulation
- ND.04
- O. G. Schmidt,
U. Denker, O. Kienzle, F. Ernst, R. J. Haug and
K. Eberl
Resonant tunneling diodes based on stacked self-assembled Ge/Si islands
- Chair: V. A. Volkov
- TN.01i
- J. P. Bird,
R. Akis, D. K. Ferry, M. El. Hassan, A. Shailos,
C. Prasad, L.-H. Lin, N. Aoki, K. Nakao, Y. Ochiai,
K. Ishibashi and Y. Aoyagi
Phase coherent electron transport in open quantum dots and quantom dot arrays
- TN.02
- V. Ya. Aleshkin,
L. Reggiani and A. Reklaitis
Current instability and shot noise in nanometric semiconductor heterostructures
- TN.03
- I. P. Zvyagin,
M. A. Ormont and K. E. Borisov
Hopping transport equation for electrons in superlattices with vertical disorder
- Chair: J. P. Bird
- QWR/QD.06
- M. V. Maximov,
A. F. Tsatsul'nikov, A. E. Zhukov, N. A. Maleev,
V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov,
D. Bimberg, T. Maka and C. M. Sotomayor Torres
Carrier relaxation in InGaAs-GaAs quantum dots formed by activated alloy phase
separation
- QWR/QD.07
- C. M. A. Kapteyn,
M. Lion, R. Heitz, D. Bimberg, P. N. Brunkov,
B. V. Volovik, S. G. Konnikov, A. R. Kovsh and
V. M. Ustinov
Comparison of hole and electron emission from InAs quantum dots
- QWR/QD.08
- V. Davydov, I. V. Ignatiev,
I. E. Kozin, S. V. Nair, J.-S. Lee, H.-W. Ren
and Y. Masumoto
Carrier relaxation dynamics in self-assembled quantum dots
- QWR/QD.09
- K. Chernoutsan,
V. Dneprovskii, S. Romanov, O. Shaligina and E. Zhukov
Optical properties of semiconductor (InP)-dielectric quantum wires
- QWR/QD.10
- N. Panev, M.-E. Pistol,
M. P. Persson, L. Samuelson and M. S. Miller
Emission line instabilities of single quantum dots of InAs in GaAs
- Chair: R. A. Suris
- QC.01i
- Yu. V. Kopaev
and S. N. Molotkov
Quantum computations based on solid state nanostructures
- QC.02i
- I. A. Merkulov
Spin relaxation of charge carriers in quantum dots
- QC.03
- I. Ya. Gerlovin, V. V. Ovsyankin,
B. V. Stroganov and V. S. Zapasskii
Coherent transients in semiconductor nanostructures as the base of optical
logic operating
- QC.04
- Alexander N. Korotkov
Continuous quantum measurement of a qubit state
- Chair: Zh. I. Alferov
- CS.01i
- Claire Gmachl, Federico Capasso,
Alessandro Tredicucci, Rüdeger Köhler, Albert L. Hutchinson,
Deborah L. Sivco, James N. Baillargeon and Alfred Y. Cho
Recent results in quantum cascade lasers and applications
- CS.02i
- V. M. Ustinov, A. E. Zhukov,
A. R. Kovsh, S. S. Mikhrin, N. A. Maleev, B. V. Volovik,
Yu. G. Musikhin, Yu. M. Shernyakov, E. Yu. Kondrat'eva,
M. V. Maximov, A. F. Tsatsul'nikov, N. N. Ledentsov,
Zh. I. Alferov, J. A. Lott and D. Bimberg
Long wavelength quantum dot lasers on GaAs substrates
- CS.03i
- M. Green
Prospects for photovoltaic efficiency enhancement using low dimensional structures
- AIXTRON Young Scientist Award Ceremony
- Zh. I. Alferov
Closing remarks
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