AIXTRON Young Scientist Award

In 1999, the Symposium Programme Committee and the Board of AIXTRON AG (Germany) established a special award to honour a young scientist who will present at the Symposium the best paper in the field of solid state nanostructures. The award comprises a diploma and a $500 reward sponsored by AIXTRON.

In 1999 Alexey R. Kovsh of the Ioffe Institute became the first recipient of AIXTRON Award.

In 2000 the awardee has been selected by the Award Committee from seven nominees proposed by the Programme Committee:

1. G. V. Astakhov, Ioffe Institute, St Petersburg, Russia
   Spectroscopy of negatively charged excitons interacting with 2DEG in CdTe/CdMgTe QWs
   
2. Th. Gruber, Physikalisches Institut, Universität Würzburg, Germany
   Semimagnetic resonant tunneling diodes for electron spin manipulation
3. L. Hansen, Physikalisches Institut, Universität Würzburg, Germany
   Properties of InAs quantum dots on silicon (001) and (111)
4. I. L. Krestnikov, Ioffe Institute, St Petersburg, Russia
   Formation of defect-free InGaAs-GaAs quantum dots for 1.3 µm spectral range grown by metal-organic chemical vapor deposition
   
5. A. V. Novikov, Institute for Physics of Microstructures, Nizhny Novgorod, Russia
   Effect of alloying on growth of GeSi self-assembled islands
   
6. O. G. Schmidt, Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
   Resonant tunneling diodes based on stacked self-assembled Ge/Si islands
   
7. T. Vanhoucke, Katholieke Universiteit Leuven, Belgium
   Energy level diagram of X ^- in high magnetic fields
   

At the Award Ceremony the Chair of Award Committee, Prof. Zh. Alferov, has announced the second Award recipient—Mr. Thomas Gruber.

Mr. Thomas Gruber Physikalisches Institut Universität Würzburg Am Hubland, Würzburg D-97074, Germany E-mail: gruber@physik.uni-wuerzburg.de
		1993 Finished High School (Gymnasium). 1994–1999 Study of General Physics at the University of Würzburg 1996–1997 One Year Exchange Program to Coimbra, Portugal 1998 First involvment in scientific research in a 3 month project. Field of studies: Resonant Tunneling in BeTe/ZnSe, Double Barrier Structures, I–V characteristics in external magnetic field and temperature dependencies. 1999–2000 Diploma thesis: Spin Manipulation with semimagnetic BeTe/ZnMnSe Resonant Tunneling Diodes (RTD) in the research group "Molecular Beam Epitaxy" (Professor Andreas Waag). Areas of work: MBE growth of semimagnetic II–VI materials and basic characterisation techniques. Development and investigation of so-called Spin-Switch Device. Future: Ph.D thesis at the University of Ulm involving MBE/MOCVD growth of magnetic semiconductor materials and devices.