Final Programme
Last updated June 1, 1999
-
- Zh. I. Alferov and Ed. A. Tropp
St Petersburg Scientific Centre -- historic core of the
Russian Academy of Sciences
- OS.01i
- B. Shklovskii
New phases in quantum Hall effect. Prediction and discovery
- OS.02i
- S. V. Ivanov, A. A. Toropov, T. V. Shubina, S. V. Sorokin,
A. V. Lebedev, I. V. Sedova and P. S. Kop'ev
IIVI laser heterostructures with different types of active region
- QWR/QD.01i
- S. Tarucha
Correlated electrons in quantum dot atoms and molecules
- QWR/QD.02i
- Satyadev Nagaraja and J.-P. Leburton
Electronic properties and many-body effects in quantum dots
- QWR/QD.05
- V. K. Kalevich, K. V. Kavokin, M. Paiilard, X. Marie, P. La Jeune, T. Amand
M. N. Tkachuk, V. M. Ustinov, N. N. Ledentsov and B. P. Zakharchenya
Spin separation in self-organized quantum dots under optical orientation of electrons
- QWR/QD.06
- I.E. Kozin,I. V. Ignatiev, S. Nair, H.-W. Ren, S. Sugou and Y. Masumoto
LO phonon mediated relaxation in InP self assembled quantum dots in electric field
- TN.01
- K. S. Novoselov, Yu. V. Dubrovskii, V. A. Sablikov, D. Yu. Ivanov,
E. E. Vdovin, Yu. N. Khanin, V. A. Tulin, D. Esteve, and S. Beaumont
The nonlinear conductance of the quantum wires normally pinched-off by the surface potential
- TN.02
- V. T. Petrashov, I. A. Sosnin, I. Cox,
A. Parsons, and C. Troadec
Mesoscopic superconductors in proximity to nanomagnets
- TN.03
- N. A. Maleev, A. E. Zhukov, A. Yu. Egorov,
A. R. Kovsh, V. M. Ustinov, P. S. Kop'ev, Y. Wu, R. Zhang, S. F. Li
Transport properties of InAlAs/InGaAs/InP graded channel pseudomorphic high electron mobility structures
- LOED.01i
- J. Lott
Progress in red vertical cavity surface emitting lasers
- LOED.03
- D. L. Huffaker, O. Shchekin, G. Park, Z. Z. Zou, S. Csutak and
D. G. Deppe
Temperature dependence of spontaneous emission and threshold characteristics for 1.3 µm InGaAs/GaAs quantum dot GaAs-based
lasers
- LOED.04
- A. V. Sakharov, W. V. Lundin, V. A. Semenov,
A. S. Usikov, N. N. Ledentsov, A. F. Tsatsul'nikov, Zh. I. Alferov,
A. Hoffmann and D. Bimberg
Surface-mode lasing from optically pumped InGaN/GaN heterostructures
- 2DEG.01i
- A. O. Govorov, M. Rotter, M. Streibl, C. Rocke,
A. V. Kalameitsev, A. Wixfor, and J. P. Kotthaus
Acousto-electric transport through a two-dimensional system in the nonlinear regime
- 2DEG.02
- R. T. F. van Shaijk, A. de Visser, S. Oltshoorn,
H. P. Wei and A. M. M. Pruisken
The plateau-insulator phase transition in the quantum Hall regime
- 2DEG.03
- I. L. Drichko, A. M. Diakonov,
V. D. Kagan, V. V. Preobrazenskiy, D. A. Pristinski, I. Yu. Smirnov, A. I. Toropov
High-frequency hopping conductivity of two-dimensional electronic system in GaAs/AlGaAs heterostructures (acoustical
method)
- 2DEG.04
- P. M. Koenraad, A. F. W. van de Stadt, J. H. Wolter,
A. Dekeyser, R. Bogaerts and F. Herlach
Reduction of the intersubband scattering delta doped layers by the Lorentz-force of an in-plane magnetic field
- QWR/QD.03i
- M. Straßburg, R. Engelhardt, R. Heitz, U. W. Pohl, S. Rodt,
V. Türck, A. Hoffmann, D. Bimberg,
I. L. Krestnikov, N. N. Ledentsov, Zh. I. Alferov,
D. Litvinov, A. Rosenauer and D. Gerthsen
Quantum dots formed by ultrathin CdSe-ZnSe insertions
- QWR/QD.04i
- V. V. Kulakovskii, A. Forchel, M. Bayer, G. Bacher
Excitons and multiexcitons in IIVI and IIIV semiconductor quantum dots in magnetic field
- QWR/QD.07
- Valery Zwiller, Mats-Erik Pistol, M. A. Odnoblyudov and Lars Samuelson
Temperature studies of single InP quantum dots
- QWR/QD.08
- Mats-Erik Pistol, Dan Hessman, Craig Pryor and Lars Samuelson
Stark shift of individual quantum dots
- QWR/QD.09
- D. M. Hofmann, A. Hofstaetter, F. Henecker,
B. K. Meyer, N. G. Romanov, A. I. Ekimov, T. Gacoin, G. Counio and J. P. Biolot
Optical and magnetic resonance investigations on Mn doped CdS nanocrystals
- OAN.01i
- A. A. Fraerman, S. A. Gusev, I. M. Nefedov, I. R. Karetnikova,
L. A. Mazo, M. V. Sapozhnikov, Yu. N. Nozdrin, I. A. Shereshevskii and L. V. Suhodoev
2D lattices of ferromagnetic nanoparticles as supermagnetics
- OAN.02
- S. A. Gusev, S. V. Gaponov, A. A. Fraerman,
L. A. Mazo, M. V. Sapozhnikov, Yu. N. Nozdrin and L. V. Suhodoev
Fabrication and magnetic properties of 2D arrays of nanoparticles
- OAN.03
- V. M. Kozhevin, D. A. Yavsin, S. A. Gurevich, V. M. Kouznetsov,
V. M. Mikushkin, S. Yu. Nikonov, A. N. Titkov and A. V. Ankudinov
Granulated metallic nanostructure fabricated by laser ablation
- OAN.04
- V. N. Bogomolov, N. A. Feoktistov, V. G. Golubev,
J. L. Hutchison, D. A. Kurdyukov, A. B. Pevtsov, J. Sloan and L. M. Sorokin
Three-dimensional (3D) arrays of silicon nanosize elements in the void sublattice of artificial opals
- NC.01i
- J. C. Maan
High magnetic fields to study materials properties and physics of semiconductor nanostructures
- NC.02
- N. D. Zakharov, P. Werner, V. M. Ustinov,
G. E. Cirlin, O. V. Smolski, D. V. Denisov, Zh. I. Alferov,
N. N. Ledentsov, R. Heitz and D. Bimberg
Structure of stacked InAs quantum dots in a Si matrix: HRTEM experimental results and
modeling
- NC.03
- A. V. Ankudinov, A. N. Titkov, T. V. Shubina,
S. V. Ivanov, P. S. Kop'ev, H.-J. Lugauer, A. Waag, G. Landwehr
Cross-sectional atomic force microscopy of~ZnSe-based laser diodes
- NC.04
- N. S. Maslova, V. I. Panov, V. V. Rakov,
S. V. Savinov, A. Depuydt and C. Van Haesendonck
Low temperature scanning tunneling spectroscopy of different individual impurities on GaAs (110) surface and in subsurface layers
- TP.01
- E. E. Vdovin, Yu. N. Khanin, K. S. Novoselov, D. Yu. Ivanov,
Yu. V. Dubrovskii, L. Eaves, P. C. Main, A. Patane,
A. Polimeni, M. Henini, J. Middleton and G. Hill
Resonant tunneling through GaAs quantum well with embedded InAs quantum dots
- TP.02
- V. A. Volkov, M. Feiginov, Yu. V. Dubrovskii,
V. G. Popov, E. E. Vdovin, L. Eaves, P. Main, M. Henini,
A. K. Geim, J. K. Maan, M. S. Skolnick
The step-like features on the IV curves of the resonant tunneling diodes: current vortexes?
- TP.03
- M. N. Feiginov, V. A. Volkov, L. Eaves and
J. K. Maan
Quantum-well plasma instability in the resonant tunneling regime
- 2DEG.05p
- N. S. Averkiev, L. E. Golub and S. A. Tarasenko
Role of intensive intersubband transitions in Shubnikovde Haas oscillations and in weak localization
- 2DEG.06p
- D. A. Bakaushin, A. S. Vedeneev, V. E. Sizov,
B. A. Aronzon, N. K. Chumakov, A. B. Davydov and E. Z. Meilikhov
High-temperature conductance quantization: the case of quasi-2D percolating structures
- 2DEG.07p
- E. M. Baskin, M. V. Entin
Antidot lattice in QHE regime: macroscopic limit
- 2DEG.08p
- V. I. Borisov, V. A. Sablikov, A. I. Chmil' and
I. V. Borisova
Real-space transfer of electrons under a random potential: a possible mechanism of current instability in heterostructures
- 2DEG.09p
- A. V. Chaplik and L. I. Magarill
Electrostatics and kinetics of 2D electrons in lateral superlattices on vicinal planes
- 2DEG.10p
- A. V. Germamnenko, V. A. Larionova, G. M. Minkov and
S. A. Negashev
Anomalous magnetoconductance due to weak localization in 2D systems with anisotropic scattering:
computer simulation
- 2DEG.11p
- M. V. Yakunin, Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov
Unusually wide plateau of the quantum Hall effect in a quasi bilayer
hole system inside the p-GeSi/Ge/p-GeSi quantum well
- GPLDS.01p
- H.- J. Drouhin, G. Lampel, Yu. A. Mamaev, A. V. Subashiev
and Yu. P. Yashin
Spin and energy resolved near-threshold electron photoemission from strained GaAs/GaAsP heterostructure
- GPLDS.02p
- Yu. E. Kitaev, M. F. Kokorev and P. Tronc
Symmetry of the GaAs crystal with delta-doping Si layers and its influence on the band structure
- GPLDS.03p
- V. A. Kulbachinskii, V. G. Kytin, R. A. Lunin,
A. V. Golikov, A. V. Demin, V. G. Mokerov, A. S. Bugaev,
A. P. Senichkin, P. M. Koenraad, R. T. F. van Schaijk
and A. de Visser
Observation of negative persistent photoconductivity in GaAs delta-doped by Sn
- GPLDS.04p
- E. E. Takhtamirov, V. A. Volkov
Effective-mass approximation for electrons in ultrathin heterolayers
- MPC.01p
- S. Rudin and T. L. Reinecke
Polariton effects in optical spectra of microcavities
- MPC.02p
- M. Singh, W. Lau and J. Desforges
Dressed polariton emission in III-V semiconductor doped with quantum wells or quantum dots
- MPC.03p
- Yu. A. Vlasov, M. A. Kaliteevski and V. V. Nikolaev
Light localization in a disordered photonic crystal
- NC.05p
- A. G. Banshchikov, A. V. Kimel, V. V. Pavlov, R. V. Pisarev,
N. S. Sokolov, and Th. Rasing
Second harmonic generation probing of MnAs/Si(111) heterostructures
- NC.06p
- P. N. Brunkov, A. Patane, A. Levin,
A. Polimeni, L. Eaves, P. C. Main, Yu. G. Musikhin, A. R. Kovsh, V. M. Ustinov, and S. G. Konnikov
Electronic structure of stacked self-organized InAs/GaAs quantum dots
- NC.07p
- A. A. Bukharaev, N. I. Nurgazizov,
A. A. Mozhanova and D. V. Ovchinnikov
Atomic force microscopy characterization of nanostructured materials using selective chemical etching
- NC.08p
- V. Davydov, H.-W. Ren, S. Sugou and Y. Masumoto
Ionized states in the IIIV heterostructure measured by low-temperature capacitance spectroscopy with optical excitation
- NC.09p
- S. L. Dudarev, M. R. Castell, G. A. D. Briggs and A. P. Sutton
Electron tunnelling at surfaces of Mott insulating d- and f- metal oxides:
the ab-initio interpretation of STM images
- NC.10p
- N. N. Faleev, V. V. Chaldyshev,
V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin and Y. Takeda
X-ray reciprocal space mapping of coincided As-clusters/GaAs and delta-InAs/GaAs superlattices grown at low temperature
- OAN.05p
- Andrei Susha, Dangsheng Su and Michael Giersig
The preparation of ordered colloidal magnetic particles by magnetophoretic deposition
- SBNS.01p
- V. G. Baru, A. P. Chernushich, M. I. Elinson,
V. A. Jitov, V. I. Pokalyakin, G. V. Stepanov,
A. A. Timofeev and L. Yu. Zaharov
Light-emitting nanocomposite films on the base of silcon nitride and silicon oxynitride layers
- SBNS.02p
- A. B. Fedotov, L. A. Golovan', P. K. Kashkarov,
N. I. Koroteev, M. G. Lisachenko, A. N. Naumov,
D. A. Sidorov-Biryukov, V. Yu. Timoshenko and A. M. Zheltikov
Second harmonic generation in porous silicon multilayer periodic structures
- SBNS.03p
- V. V. Savkin, A. A. Fedyanin, F. A. Pudonin,
A. N. Rubtsov and O. A. Aktsipetrov
Optical second harmonic generation studies of the dc-electric field screening
in Si-SiO2 multiple quantum wells
- SBNS.04p
- O. M. Sreseli, D. I. Kovalev and G. Polisski
Polarization anisotropy of photoluminescence of oxidized silicon nanocrystals
- SBNS.05p
- E. I. Terukov,
V. Kh. Kudoyarova, V. Yu. Davydov,
K. V. Koughia, G. Weiser and H. Mell
The influence of deposition parameters on the structure of nanocrystalline
silicon
- TN.04p
- I. V. Gornyi,
A. G. Yashenkin and D. V. Khveshchenko
Coulomb drag in double layer systems with correlated disorder
- TN.05p
- P. Kleinert, and V. V. Bryksin
Quantum transport theory for semiconductor superlattices
- TN.06p
- A. N. Lachinov,
T. G. Zagurenko, V. M. Kornilov and R. Z. Valiev
Influence of structural transition in metal on charge transport in
nanocrystal metal-polymer-metal system
- TN.07p
- G. M. Mikhailov,
I. V. Malikov, A. V. Chernykh,
E. Olsson and L. Ryen
Influence of a built-in potential on electron transport properties of
metallic ballistic structures, as evidence of quantum-well effect
- TN.08p
- S. Morozov,
A. Balandin, S. Cai, R. Li, Yu. Dubrovskii,
K. L. Wang, G. Wijeratne and C. R. Viswanathan
Low flicker noise GaN/AlGaN heterostructure field effect transistors
with submicrometer channel
- TN.09p
- O. E. Raichev and P. Vasilopoulos
Influence of a magnetic field on the Coulomb drag between quantum wires
in the ballistic regime
- TN.10p
- E. L. Shangina
Scattering processes in the structures with one-dimensional lateral
superlattice
- TP.04p
- V. Ya. Aleshkin,
A. V. Biryukov, S. V. Gaponov,
Z. F. Krasil'nik and V. L. Mironov
Scanning tunneling microscope investigations of local
photoconductivity in InGaAs/GaAs quantum-dimensional
nanostructures
- TP.05p
- Yu. V.Dubrovskii,
E. E. Vdovin, Yu. N. Khanin, V. G. Popov,
D. Yu. Ivanov, D. K. Maude, J.-C. Portal,
L. Eaves, P. C. Main, M. Henini, J. Middleton,
A. K. Geim, J. K. Maan and G. Hill
Tunneling between strongly localized two-dimensional electron systems
- TP.06p
- Yu. N. Khanin,
E. E. Vdovin, Yu. V. Dubrovskii,
D. K. Maude, J.-C. Portal and T. G. Andersson
Resonant tunneling through single thin barrier heterostructure with
spacer layers
- TP.07p
- I. N. Kotel'nikov, and V. A. Volkov
Intersubband resonant polaron in near-surface delta-doped GaAs
- TP.08p
- I. Lapushkin A. Zakharova, V. Gergel
Investigation of the characteristics of interband resonant tunnelling diodes
with modified barriers
- TP.09p
- M. Meixner, P. Rodin,
E. Schöll, and A. Wacker
Dynamics and stability of lateral current density patterns
in resonant-tunneling structures
- TP.10p
- S. S. Savinskii,
N. V. Khokhriakov, S. Melchor
Tunneling quantum current in carbon nanotube's junctions
- TP.11p
- I. P. Zvyagin
Virtual-tunneling-assisted vertical conduction
in superlattices with intentional disorder
- QW/SL.01i
- P. G. Eliseev
Radiative processes in InGaN quantum wells
- EN.03
- N. N. Sibeldin,
M. L. Skorikov, V. A. Tsvetkov and
B. Etienne
Magnetooptics of the excitonic states in the shallow GaAs/AlGaAs quantum
wells
- QW/SL.03
- C. P. Holfeld,
T. W. Canzler, D. M. Whittaker,
F. Löser, M. Sudzius, K. Leo and K. Köhler
Impact of Fano resonances on the WannierStark ladder
- QW/SL.04
- Yu. A. Aleshchenko,
I. P. Kazakov, V. V. Kapaev,
Yu. V. Kopaev, N. V. Kornyakov, and A. E. Tyurin
Electric field induced interference impurity ionization in coupled quantum
wells
- QW/SL.05
- B. Köning,
U. Zehnder, D. R. Yakovlev, W. Ossau, T. Gerhard,
M. Keim, A. Waag, and G. Landwehr
Magnetic field-induced type-I type-II transition in (ZnMn)Se/(ZnBe)Se spin
superlattices
- QW/SL.06
- G. V. Astakhov,
D. R. Yalovlev, V. P. Kochereshko,
G. V. Mikhailov, W. Ossau, J. Nùrnberger,
W. Faschinger and G. Landwehr
Magneto-reflectivity studies of ZnSe/ZnMgSSe QWs with low density 2DEG
- EN.05p
- S.D. Baranovskii,
H. Cordes, R. Eichmann and P. Thomas
Temperature-dependent exciton dynamics in quantum wells
- EN.06p
- Yu. K. Dolgikh,
S. A. Eliseev, I. Ya. Gerlovin,
V. V. Ovsyankin, Yu. P. Efimov, I. V. Ignatev,
I. E. Kozin, V. V. Petrov, V. Pantukhin
and Y Masumoto
Luminescence of HH-excitons in GaAs/GaAlAs superlattices under resonant
excitation
- EN.07p
- Olga L. Lazarenkova, a
nd Alexander. N. Pikhtin
Simulation of nanostructures excitonic spectra in an electric field
- EN.08p
- K. L. Litvinenko,
and V. G. Lyssenko
The influence of anticrossing of exciton states on exciton relaxation in
GaAs/AlGaAs double single quantum wells
- FIR.05p
- L. E. Vorobjev,
S. N. Danilov, V. L. Zerova,
Yu. V. Kochegarov, D. A. Firsov, R. Kh. Zhukavin,
S. G. Pavlov and V. N. Shastin
Intraband absorption of far-infrared light by electrons in GaAs/AlGaAs
quantum wells
- FIR.06p
- L. E. Vorobjev,
D. A. Firsov, V. A. Shalygin, I. E. Titkov,
A. M. Tomlinson, C. T. Foxon and A. M. Fox
Photocurrent under carrier tunneling in GaAs/AlGaAs coupled quantum wells
embedded in p-i-n heterostructure
- LOED.09p
- Ju. V. Alekseeva,
M. S. Shatalov and S. A. Gurevich
QW diode laser modulation by lateral gain tailoring
- LOED.10p
- V. I. Kopchatov,
N. Yu. Gordeev, S. V. Ivanov, P. S. Kop'ev,
H.-J. Lugauer, G. Reuscher, A. Waag and G. Landwehr
Peculiarities of radiative recombination in BeMgZnSe/ZnCdSe injection lasers
- LOED.11p
- N. A. Pikhtin,
A. Yu. Leshko, A. V. Lyutetskiy, S. A. Shuravin,
A. L. Stankevich, N. V. Fetisova and I. S. Tarasov
High power broadband singlelobe InGaAsP/InP superluminescent diode
- LOED.12p
- I. S. Tarasov,
L. S. Vavilova, V. A. Kapitonov, D. A. Livshits,
A. V. Lyutetskiy, A. V. Murashova, N. A. Pikhtin,
G. V. Skrynnikov
Peculiarities of photoluminescence and electroluminescence properties of
spontaneously formed periodical InGaAsP/GaAs structures
- ND.05p
- V. A. Bykov,
A. V. Emelyanov, E. A. Poltoratski and
V. N. Riabokon
Nanotechnology methods and creation of the terabit storage
- ND.06p
- V. A. Sablikov and
S. V. Polyakov
Charging effects in a quantum wire with leads
- ND.07p
- E. S. Soldatov,
A. S. Trifonov, S. P. Gubin, V. V. Khanin,
G. B. Khomutov, S. A. Yakovenko, A. Yu. Obidenov,
V. V. Shorochov and D. B. Suyatin
Single-electron molecular transistors on the base of various types of
cluster molecules
- NT.11p
- N. S. Averkiev,
A. M. Coonis, A. M. Monakhov,
A. Ya. Shik and P. M. Koenraad
The electric field fluctuations and the $\delta$-layer broadening in
semiconductors
- NT.12p
- V. L. Berkovits,
V. P. Ulin, T. V. L'vova and Akira Izumi
Nitrogen chemisorbed layers on GaAs(100): formation, properties, applications
- NT.13p
- A. Yu. Egorov,
D. Bernklau, M. Schuster, Yu. Sherniakov,
V. M. Ustinov and H. Riechert
Optical and structural properties of InGaAsN/GaAs heterostructures
- NT.14p
- A. K. Kalkan,
H. Li, E. Basgall and S. J. Fonash
Micro-protrusion arrays fabricated by e-beam exposure
- NT.15p
- I. A. Karpovich,
B. N. Zvonkov, N. V. Baidus, D. O. Filatov,
Yu. Yu. Gushina and S. V. Morozov
Self-organized InGaAs/GaAs quantum wire nanostructures
grown by metal-organic vapor phase epitaxy
- NT.16p
- V. V. Mamutin,
V. A. Vekshin, V. Yu. Davydov, V. V. Ratnikov,
V. V. Emtsev, A. N. Smirnov, S. V. Ivanov
and P. S. Kop'ev
Influence of initial MBE growth stage on properties of hexagonal
InN/Al2O3 films
- NT.17p
- E. M. Mintairov,
I. Kochnev, V. M. Lantratov, J. L. Merz,
Yu. Musikhin, A. S. Vlasov, H. D. Robinson, and
B. B. Goldberg
Annealing and morphology transformation effects in MOCVD grown of
self-organized InAlAs-AlGaAs quantum dots
- NT.18p
- I. G. Neizvestny,
N. L. Shwartz, A. V. Zverev
and Z. Sh. Yanovitskaya
3D-model of epitaxy on diamond-like crystal (111) surface
- NT.19p
- O. V. Nekrutkina,
A. A. Toropov, T. V. Shubina, S. V. Sorokin,
S. V. Ivanov and P. S. Kop'ev
Effect of laser annealing on optical properties of ZnCdSe/ZnSSe
quantum well heterostructures
- NT.20p
- V. Ya. Prinz,
S. V. Golod, V. I. Mashanov
Free-standing GeSi/Si micro- and nanotubes
- NT.21p
- S. N. Rechkunov,
I. A. Panaev, A. K. Gutakovsky, A. I. Toropov
InAs/GaAs stacked lateral superlattices grown on vicinal GaAs (001)
surfaces by molecular beam epitaxy
- NT.22p
- Slava. V. Rotkin,
RobertA.Suris and Stanley F. Kharlapenko
The energy of the carbon-flake nanocluster: pentagon-pentagon distance
optimization
- NT.23p
- L. G. Rotkina,
S. L. Nesterov and A. Naschekin
C60 based microlithography: new method of nanofabrication
- NT.24p
- I. V. Sedova,
S. V. Sorokin, A. A. Sitnikova, R. V. Zolotareva,
S. V. Ivanov, and P. S. Kop'ev
Structural defects due to growth interruptions in ZnSe-based heterostructures
- NT.25p
- E. F. Sheka,
E. A. Nikitina and M. Aono
Atom removing from the Si (001) (2x1)H surface under STM tip.
Quantum-chemical approach
- NT.26p
- N. L. Yakovlev,
A. G. Banshchikov, R. N. Kyutt, N. S. Sokolov
and L. Hirsch
Growth and structure of MnxCa(1-x)F2
epitaxial films on Si (111)
- QW/SL.07p
- V. Ya. Aleshkin,
V. I. Gavrilenko, I. V. Erofeeva, O. A. Kuznetsov,
M. D. Moldavskaya, V. L. Vaks and D. B. Veksler
Hole cyclotron resonance in MQW Ge/GeSi heterostructures in quantizing
magnetic fields
- QW/SL.08p
- P. G. Baranov,
N. G. Romanov, A. Hofsteatter, B. K. Meyer,
A. Scharmann, W. von Förster, F. J. Ahlers
and K. Pierz
In-plane linear polarization of luminescence and level anticrossings in
GaAs/AlAs superlattices and quantum wells
- QW/SL.09p
- C. Camilleri,
D. Scalbert, J. Allègre, M. Dyakonov,
M. Nawrocki, J. Cibert, A. Arnoult and S. Tatarenko
Damping of manganese spin precession in
the presence of free carriers in CdMnTe quantum wells
- QW/SL.10p
- A. A. Gorbatsevich
and O. V. Zhabitsky
Nonparabolicities and negative hole masses in quantum wells
- QW/SL.11p
- Yu. E. Kitaev,
M. F. Limonov and P. Tronc
Phonons in wurtzite (GaN)m(AlN)n superlattices:
non-monotoneous dependence of the number of Raman-active modes
on superlattice period
- QW/SL.12p
- L. I. Korovin,
I. G. Lang and S. T. Pavlov
Combined magnetopolaron in magnetooptical effects
in quantum wells
- QW/SL.13p
- V. V. Krivolapchuk,
E. S. Moskalenko, A. L. Zhmodikov,
T. S. Cheng and C. T. Foxon
Angular dependence of luminescence from GaAs/AlGaAs DQW
- QW/SL.14p
- Yu. A. Mityagin,
V. N. Murzin, A. A. Pishchulin and
I. P. Kazakov
Electric field domains and self-sustained current
oscillations in weakly-coupled long period
GaAs/AlGaAs superlattices
- QW/SL.15p
- Kh. Moumanis,
R. P. Seisyan, S. I. Kokhanovskii and M. E. Sasin
Band parameters of MQWs heterostructures InGaAs/GaAs: magnetooptical
study
- QW/SL.16p
- A. S. Polkovnikov,
E. B. Dogonkine and G. G. Zegrya
Effect of relaxation processes on Auger recombination in semiconductor
quantum wells
- QW/SL.17p
- Yu. A. Romanov,
Ju. Yu. Romanova
Gigantic oscillations of DC-Voltage in semiconductor superlattices
- QW/SL.18p
- M. Singh,
J. Desforges and W. Lau
Generation and recombination in semimetallic heterostructures
- QWR/QD.10p
- N. S. Averkiev,
S. O. Kognovitsky, R. P. Seisyan and
V. V. Travnikov
A new type of surface waves on the open metallized nanowires
- QWR/QD.11p
- E. B. Dogonkine,
A. S. Polkovnikov and G. G. Zegrya
Mechanisms of Auger recombination in semiconductor quantum wires
- QWR/QD.12p
- V. Davydov,
I. V. Ignatiev, I. E. Kozin
J.-S. Lee, H.-W. Ren, S. Sugou and Y. Masumoto
Unusual temperature behavior of the photoluminescence of the InP
and InGaAs quantum dots under quasiresonance excitation
- QWR/QD.13p
- V. P. Evtikhiev,
I. V. Kudryashov, E. Yu. Kotel'nikov,
A. K. Kryganovskii, A. S. Shkolnik,
A. N. Titkov and V. E. Tokranov
Effect of GaAs (001) surface misorientation on the emission
from MBE grown InAs quantum dots
- QWR/QD.14p
- H.-W. Ren, S. Sugou,
Y. Masumoto, I. Ignatiev and I. Kozin
Cold anti-Stokes photoluminescence of InP self-assembled quantum dots
in the presence of electric current
- QWR/QD.15p
- D. A. Mazurenko,
A. V. Scherbakov, A. V. Akimov, D. L. Fedorov,
A. J. Kent and M. Henini
Photoluminescence of InAs/GaAs quantum dots protect in the presence of
subband 1.06 µm excitation
- QWR/QD.16p
- D. B. Turchinovich,
V. P. Kochereshko, H. Mariette, R. T. Cox and
Y. Merle d'Aubigne
Cladding layer effect on the reflectance and transmission spectra
in the CdTe/CdZnTe MQWs
- QWR/QD.17p
- S. Yu. Verbin,
B. V. Novikov, R. B. Juferev, Yu. Stepanov,
A. B. Novikov, Dinh Son Thach, I. Shchur,
V. G. Talalaev, G. Gobsch, R. Goldhahn, N. Stein,
A. Golombek, G. E. Cirlin, V. G. Dubrovskii,
V. N. Petrov, A. E. Zhukov, A. Yu. Egorov
and V. M. Ustinov
Photoluminescence study of electronic structure
of InAs quantum dots grown on GaAs vicinal surfaces
- QWR/QD.18p
- D. A. Vinokurov,
V. A. Kapitonov, Z. N. Sokolova,I. S. Tarasov
Photoluminescence study of InP nanoscale islands grown by MOVPE
in InGaAs/GaAs matrix
- QWR/QD.19p
- G. Zanelatto,
Yu. A. Pusep, N. T. Moshegov, A. I. Toropov,
P. Basmaji, J. C. Galzerani
Raman study of the topology of InAs/GaAs self-assembled quantum dots
- QWR/QD.20p
- G. Zegrya, M. Tkach,
O. Makhanets, V. Zharkoy
Electron in quasiplane superlattice of cylindric quantum dots
- LOED.02i
- M. Grundmann
Gain in quantum dots lasers
- LOED.05
- A. R. Kovsh,
D. A. Livshits, A. E. Zhukov, A. Yu. Egorov,
V. M. Ustinov, M. V. Maximov, N. N. Ledentsov,
P. S. Kop`ev, Zh. I. Alferov and D. Bimberg
3.3 W injection heterolaser based on self-organized quantum dots
- LOED.06
- I. L. Krestnikov,
N. A. Maleev, M. V. Maximov, A. F. Tsatsul'nikov,
A. E. Zhukov, A. R. Kovsh, I. V. Kochnev,
N. M. Shmidt, N. N. Ledentsov, V. M. Ustinov,
P. S. Kop'ev, Zh. I. Alferov and D. Bimberg
1.06 and 1.3 µm resonant cavity-enhanced photodetectors
based on InGaAs quantum dots
- LOED.07
- M. V. Maximov,
Yu. M. Shernyakov, A. F. Tsatsul'nikov,
B. V. Volovik, D. A. Bedarev,
I. N. Kaiander, N.N. Ledentsov,
A. E. Zhukov, A. R. Kovsh, V. M. Ustinov,
P. S. Kop'ev, Zh. I. Alferov and D. Bimberg
Lasing from quantum dots formed by activated alloy spinodal
decomposition on InAs stressors
- LOED.08
- A. F. Tsatsul'nikov,
N. A. Bedarev, A. R. Kovsh, P. S. Kop'ev,
N. N. Ledentsov, N. A. Maleev, Yu. G. Musikhin,
M. V. Maximov, A. A. Suvorova, V. M. Ustinov,
B. V. Volovik, A. E. Zhukov, D. Bimberg and
P. Werner
1.3 µm emission from 2 ML InAs quantum dots in a GaAs matrix
- ND.01i
- K. F. Renk
Wide-miniband superlattice devices for microwave and
tera-hertz frequencies
- ND.02
- A. N. Korotkov
Langevin method for shot noise in single-electron tunneling
- ND.03
- V. A. Krupenin,
D. E. Presnov, A. B. Zorin and
J. Niemeyer
Single electron transistor of stack design as ultrasensitive electrometer
- ND.04
- I. Maximov, Q. Wang,
M. Graczyk, P. Omling, L. Samuelson,
W. Seifert and I. Shorubalko
Processing and characterization of extended InP/GaInAs electron waveguides
- NT.01i
- Michael Heuken
Semiconductor nanostructures grown in production MOVPE reactors
- NT.03
- V. Ya. Prinz,
A. V. Chehovskiy and L. A. Nenasheva
Using of self-formed semiconductor micro- and nanotubes
as a precise etch mask
- NT.04
- W. V. Lundin,
A. V. Sakharov, V. A. Semenov, A. S. Usikov,
M. V. Baidakova, I. L. Krestnikov and
N. N. Ledentsov
Growth and characterization of InGaN/GaN nanoscale
heterostructures
- NT.05
- T. V. Shubina,
V. V. Mamutin, A. V. Lebedev,
V. V. Ratnikov, V. A. Vekshin,
A. A. Toropov, N. M. Shmidt, S. V. Ivanov,
P. S. Kop'ev, M. Karlsteen, U. Sodervall,
M. Willander, G. R. Pozina, J. P. Bergman
and B. Monemar
Optical and structural characterization of GaN grown by MBE
using indium as a surfactant
- NT.06
- A. V. Novikov,
N. V. Vostokov, I. V. Dolgov, Yu. N. Drozdov,
Z. F. Krasil'nik, D. N. Lobanov,
M. D. Moldavskaya, V. V. Postnikov, D. O. Filatov
Growth of self-assembled GeSi islands with narrow size distribution on
Si (001)
- FIR.01
- L. E. Vorobjev,
D. A. Firsov, V. A. Shalygin,
V. N. Tulupenko, Zh. I. Alferov, P. S. Kop'ev,
I. V. Kochnev, N. N. Ledentsov, V. M. Ustinov,
Yu. M. Shernyakov and G. Belenky
Emission and amplification of mid-infrared radiation in quantum well
structures under generation of near-infrared light
- FIR.02
- V. Ya. Aleshkin,
A. A. Andronov and E. V. Demidov
New type intraband quantum well laser
- FIR.03
- R. H. J. De Meester,
F. M. Peeters and M. Helm
Optical absorption of biased semiconductor superlattices
- FIR.04
- Yu. L. Ivanov,
V. M. Ustinov, A. E. Zhukov, D. V. Tarkin
E. Gornic, R. Zobl
Gunn effect and possibility for FIR radiation in strained 2D InGaAs/AlGaAs
structure
- NT.02i
- V. P. Evtikhiev
Vicinal surface as a tool for QD control: InAs on GaAs
- NT.07
- V. A. Shchukin
and A. N. Starodubtsev
Self-organized growth of composition-modulated alloys
- NT.08
- G. E. Cirlin,
N. K. Polyakov, Yu. B. Samsonenko,
V. G. Dubrovskii, V. N. Petrov,
D. V. Denisov, V. M. Busov, V. M. Ustinov
VolmerWebber epitaxial growth of InAs nanoscale islands on Si (100)
- NT.09
- S. A. Komarov,
G. S. Solomon and J. S. Harris Jr.
Growth of InAs self-assembled islands on Ge
- NT.10
- S. Bose and
E. Schöll
Optimization of the size distribution of self-organized quantum dots
- EN.01i
- D. R. Yakovlev,
G. V. Astakhov, V. P. Kochereshko,
A. Keller, W. Ossau and G. Landwehr
Charged excitons in ZnSe-based QWs
- EN.02
- I. P. Ipatova,
A. Yu. Maslov and O. V. Proshina
Polaron exciton in spherical quantum dot
- QW/SL.02
- E. L. Ivchenko,
V. P. Kochereshko, A. V. Platonov, D. R. Yakovlev,
M. Keim, W. Ossau, A. Waag and G. Landwehr
Quantum confined Pockels effect and optical polarized
spectroscopy of interfaces in type-II heterostructures
- EN.04
- Erich Runge and
Roland Zimmermann
Exciton relaxation and quantum mechanical level repulsion
- CS.01i
- H. Sakaki
10 nm-scale epitaxial quantum dots and electron population control
for physics and device studies
- CS.02i
- G. Abstreiter
Optical spectroscopy of individual semiconductor quantum dots
- CS.03i
- P. Solomon
To the limits of CMOS
AIXTRON Young Scientist Award Ceremony
- Zh. I. Alferov
Closing remarks
Page design by Nikita Vsesvetskii. © Copyright Ioffe
Institute, 1999
|