AIXTRON Young Scientist Award

This year the Symposium Programme Committee and the Board of AIXTRON AG (Germany) established a special award to honour a young scientist who will present at the Symposium the best paper in the field of solid state nanostructures. The award consists of a diploma and a $500 reward sponsored by AIXTRON.

The awardee has been selected by the Award Committee from six nominees proposed by the Programme Committee:

1. C. P. Holfeld, Technische Universitat Dresden, Germany,
   Impact of Fano resonance on the Wannier-Stark ladder
2. A. R. Kovsh, Ioffe Institute, St&nbs;Petersburg, Russia,
   3.3 W injection heterolaser based on self-organized quantum dots
3. I. L. Krestnikov, Ioffe Institute, St Petersburg, Russia,
   1.06 and 1.3 µm resonant cavity-enhanced photodetectors based on InGaAs quantum dots
4. M. D. Moldavskaya, Institute for Physics of Microstructures, Nizhny Novgorod, Russia,
   Hole cyclotron resonance in MQW Ge/GeSi heterostructures in quantizing magnetic field
5. M. L. Skorikov, Lebedev Physical Institute, Moscow, Russia,
   Magnetooptics of the excitonic states in the shallow GaAs/AlGaAs quantum wells
6. V. Zwiller, Lund University, Lund, Sweden,
   Temperature studies of single InP quantum dots

At the Award Ceremony the Chair of Award Committee has announced the first Award recipient—Dr. Alexey R. Kovsh.

Dr. Alexey R. Kovsh Ioffe Physico-Technical Institute Russian Academy of Sciences 26, Polytechnicheskaya St. Peterburg 194021 Russia E-mail: kovsh@beam.ioffe.rssi.ru

Dr. A. Kovsh received the M.S. with honors (1996) in Optoelectronics from the St Petersburg Electrical Engineering University, and Ph.D. (1999) in Semiconductor Physics from the Ioffe Institute. His dissertation research was on diode lasers based on InGaAs/AlGaAs and InAs/InGaAs/InP self-organized quantum dots. His principle areas of research interest are in MBE growth of IIIúV semiconductor heterostructures based on InGaAlAs on GaAs and InP substrate, study effect of growth condition and active region design on optical, structural and electrical properties of high electron mobility transistor structures, short-period superlattices, quantum well and self-organized quantum dot structures, and device performance of diode lasers based on quantum dots. From 1996 to 1999, he was a Ph.D. student of the laboratory of quantum-size effect heterostructures at the Ioffe Institute and since 1999 he has been working as a researcher of the same laboratory. He has authored over 100 papers in refereed journals and conference proceedings. Awards 1996 Award of Russian Education Ministry for the best Master Thesis in optoelectronics 1995, 1996, 1997, 1998 Award of Soros Education Program