6th International Symposium
|
|
|
Ioffe Institute, 1998, 536 pages, 308 illustrations. Softbound ISBN: 5-86763-120-6 Printed in Russian Federation By tradition the Proceedings of the Symposium is published before the beginning of the meeting. This volume was composed at the Information Services and Publishing Department of the Ioffe Institute from electronic files submitted by the authors. When necessary these files were converted into the Symposium LaTeX2e style without any text revisions. Only minor technical corrections were made by the composers. |
Contents
- Invited talks:
- Master equations for the micro-states description of carrier relaxation and recombination in quantum dots (D. Bimberg et al.)
- InAs nanoscale islands on Si surface: a new type of quantum dots (G. Cirlin et al.)
- Transition from coherent to incoherent superlattices transport (E. Gornik et al.)
- Fabrication of metallic nanostructures by local oxidation with a scanning probe microscope (C. van Haesendonck et al.).
- Influence of localization on the optical nonlinearities induced by exciton-exciton interaction in semiconductor nanostructures (J. Hvam and W. Langbein)
- Correlated dopant distributions in delta-doped layers (P. Koenraad)
- Ultrahigh-sensitive far-infrared detection based on quantum Hall devices (S. Komiyama et al.)
- Optical transitions in quantum wells and quantum dots based on SiGe heterostructures (Z. Krasil'nik et al.)
- Quantum-dot cellular automata devices and architectures (W. Porod)
- GaN-based two-dimensional electron devices (M. Shur and R. Gaska)
- Single photon turnstile device (Y. Yamamoto et al.)
- About 130 contributed papers
- Author Index