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Group of Many-Electron Phenomena in Semiconductors

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Activity of the Group of Many-Electron Phenomena in Semiconductors led by Dr. Pavel Altukhov is devoted to the physics of many-electron systems in semiconductors, semiconductor nanostructures and semiconductor devices. Interactions in the system of electrons and holes bound to a two-dimensional electron gas and in dense electron-hole systems in semiconductors are investigated in optical, magnetooptical and transport experiments. Photoluminescence and electroluminescence are used as the most effective experimental methods. Our favorable objects are silicon metal-oxide-semiconductor structures, tunneling silicon metal-oxide-semiconductor diodes and transistors and porous silicon. Our goal is to develop new physical concepts and ideas, resulting in creation of new quantum optoelectronic devices and realization of room-temperature silicon optoelectronics.

• Magnetooptics of two-dimensional electron gas at a semiconductor surface: the Kondo effect of surface excitons, localized surface charged excitons, quantum interchanging electron and hole layers at a silicon surface
• Quantum many-electron phenomena in electroluminescence of tunneling silicon metal-oxide-semiconductor diodes and transistors
• The tullistor, a new quantum optoelectronic device: the device can operate as a fast transistor, as a fast light emitter and as a photodetector
• The self-compression of electron-hole plasma in silicon: a new phenomenon, giving an opportunity for realization of room-temperature silicon optoelectronics
• Quantum many-electron phenomena in luminescence of porous silicon

1. P.D.Altukhov, Excitons in a dense two-dimensional electron gas at a semiconductor surface, Surface Science, v.361/362, pp.428-430, 1996
2. P.D.Altukhov, Magnetooptics of two-dimensional electrons at a semiconductor surface, High Magnetic Fields in the Physics of Semiconductors II, Eds. G.Landwehr and W.Ossau, World Scientific, London, pp.617-620, 1997
3. P.D.Altukhov, E.G.Kuzminov, G.V.Ivanov, Excitons and multi-exciton complexes bound to a 2-D hole layer at a silicon surface: the Kondo effect, the Coulomb blockade and a negative photoconductivity, Superlattices and Microstructures, v.23, #5, pp.985-990, 1998
4. P.D.Altukhov, A.G.Bulgakov, G.V.Ivanov, E.G.Kuzminov, Bistable electroluminescence of tunneling silicon MOS structures, Sol. St. Commun., v.103, #2, pp.103-106, 1997
5. P.D.Altukhov, G.V.Ivanov, E.G.Kuzminov, A selforganized double potential barrier in tunneling light emitting silicon MOS structures, Sol. St. Electron., v.42, #9, pp.1657-1660, 1998
6. P.D.Altukhov, E.G.Kuzminov, Condensation of a hot electron-hole plasma in tunneling silicon MOS structures, Sol. St. Commun., v.111, #7, pp.379-384, 1999
7. P.D.Altukhov, E.G.Kuzminov, Kinetics of two-dimensional electrons and holes in tunneling silicon MOS structures, Physica Status Solidi (b), v.221, #1, pp.439-445, 2000
8. P.D.Altukhov, E.G.Kuzminov, The self-compression of injected electron-hole plasma in silicon, Physica Status Solidi (b), v.232, #2, pp.364-379, 2002
9. P.D.Altukhov, The Kondo effect of surface excitons, Journal of Superconductivity: Incorporating Novel Magnetism, v.16, #2, pp.267-270, 2003