Group of Epitaxial Insulators

The Laboratory Of Spectroscopy of Solid State
 Ioffe Physico-Technical Institute RAS


Current research interests:
  • Initial stages of fluoride film growth from molecular beams on semiconductors
  • Formation of CaF2 nanostructures on Si(001)
  • Charge transfer in fluoride heterostructures doped with rare-earth ions
  • Growth and properties of heterostructures with magnetically ordered films on semiconductors
  • Heteroepitaxial stabilization of metastable phases in MnF2 and ZnF2 films on Si and GaP

  Growth:
 
MBE growth (click on the image to see details)

Experimental techniques:

a) in the group
 
RHEED
 reflection high energy electron diffraction
PL
photoluminescence
SPM
scanning probe microscopy
analysis of diffraction patterns and rocking curves luminescence of RE ions and self trapped excitons Atomic force microscopy and electrostatic force microscopy 

b) collaborative studies
 
XRD
X-Ray diffractometry including crystal truncation rod (CTR) scattering
HRTEM
high resolution transmission electron microscopy
EXAFS
Extended X-Ray absorption fine structure
XPS, UPS
X-Ray und UV Photoelectron Spectroscopy
MDS
Metastable 
He atom deexcitation spectroscopy
ESR
Electron spin resonance

Research team:

a) Staff of the Institute
 
Nikolai S.Sokolov - Head of the group, Leading Scientist,
Doctor of Sciences in Phys&Math;
Oleg V. Anisimov 
Technologist, MD;
Alexander G.Banshchikov 
 Senior Researcher, PhD;
Sergey V.Gastev 
Senior Researcher, PhD;
Marina M.Moisseeva 
Junior Researcher, MD;

Sergei M.Suturin
Junior Researcher, MD;

b) Students
Andrey V. Krupin, Trainee;
Andrew K. Kaveev, PhD. Student;
Alexey Knyasev, Master Course Student.
Former members of the group:
Jose K. Alvarez;
Tatyana Alvarez;
Andrew.Yu.Khilko, PhD;
Elena F. Martinenko;
Sergey.V.Novikov, PhD;
Yu.V.Shusterman, PhD;
Nikolay L.Yakovlev, PhD.
Collaborations: Russia
Great Britain
Germany
Italy
Japan
New Zealand
Poland
Spain
Switzerland
United States
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Support of research activity by 
 
  • Russian Academy of Sciences

  •  
  • Russian Ministry of Science and Technology

  •  
  • Swiss National Science Foundation

  •  
  • INTAS project N 97-10528 

  • "Fluoride and germanium nanostructures on silicon: basic aspects and potential applications"

Contact person: Nikolai S.Sokolov Tel.+7 (812) 247-6411  Fax +7 (812) 247-1017
e-mail: nsokolov@fl.ioffe.rssi.ru
Postal address: 26 Polytekhnicheskaya, St. Petersburg 194021, Russia

Web master: MarinaMoisseeva
e-mail: marina@fl.ioffe.rssi.ru;
Last revision:
 

 
Ioffe Physical-Tecnical Institute Division of Solid State Physics Laboratory of Spectroscopy of Solid States